NC State University

Archival Journal Publications In Chronological Order

  1. "Single-Thin-Active Layer Visible-Spectrum In1-xGaxP1-zAsz Heterostructure Lasers," R. Chin, N. Holonyak, Jr., R. M. Kolbas, J. A. Rossi, D. L. Keune, and W. O. Groves, J. Applied Physics Vol. 49, No. 4, pp. 2551-2556 (April 1978).
  2. "High Energy GaAs Laser Operation (1.775 eV, 77K): Bandfilling in a Metalorganic Chemical Vapor Deposited AlxGa1-xAs-GaAs Quantum Well Heterostructure," R. M. Kolbas, N. Holonyak, R. D. Dupuis, and P. D. Dapkus, Pis'ma Zh. Tekh. Fiz. Vol. 4, pp. 69-73 (January 1978); Soviet Technical Physics Letters Vol. 4, pp. 28-30 (January 1978).
  3. "Bandfilling in Metalorganic Chemical Vapor Deposited AlxGa1-x As-GaAs-AlxGa1-xAs Quantum-Well Heterostructure Lasers," N. Holonyak, Jr., R. M. Kolbas, E. A. Rezek, R. Chin, R. D. Dupuis, and P. D. Dapkus, J. Applied Physics Vol. 49, No. 11, pp. 5392-5397 (November 1978).
  4. "Determination of the Indirect Band Edge of GaAs by Quantum-Well Bandfilling Lz =100Å," R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, and N. Holonyak, Jr., Solid State Communications Vol. 27, No. 5, pp. 531-533 (August 1978).
  5. "Photopumped Laser Operation of MO-CVD AlxGa1-xAs Near a GaAs Quantum Well ?> 6200Å, 77K," R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, N. Holonyak, Jr., and H. Shichijo, Applied Physics Letters Vol. 33, No. 7, pp. 596-598 (October 1978).
  6. "Room-Temperature Continuous Operation of Photopumped MO-CVD AlxGa1-xAs-GaAs-AlxGa1-xAs Quantum-Well Lasers," N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, Applied Physics Letters Vol. 33, No. 1, pp. 73-75 (July 1978).
  7. "Low-Threshold Continuous Laser Operation (300-337K) of Multilayer MO-CVD AlxGa1-xAs-GaAs Quantum-Well Lasers," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, Applied Physics Letters Vol. 33, No. 8, pp. 737-739 (October 1978).
  8. "Carrier Collection in a Semiconductor Quantum-Well," H. Shichijo, R. M. Kolbas, N. Holonyak, Jr., R. D. Dupuis, and P. D. Dapkus, Solid State Communications. Vol. 27, No. 10, pp. 1029-1032 (September 1978).
  9. "MO-CVD Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, 7th Intl. Symp. on GaAs and Related Compounds, September 24-27, 1978, St. Louis in C. M. Wolfe, editor, Institute Physics Conference Series, No. 45, pp. 387-395 (London, 1979).
  10. "Bevel Cross Sectioning of Ultra-Thin (100Å) III-V Semiconductor Layers," N. Holonyak, Jr., B. A. Vojak, R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, Solid State Electronics Vol. 22, No. 4, pp. 431-433 (April 1979).
  11. "Determination of the Valence-Band Discontinuity of InP-In1-xGaxAszP1-z (x = 0.13, z= 0.29) by Quantum-Well Luminescence," R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, R. M. Kolbas, and E. A. Rezek, Applied Physics Letters Vol. 34, No. 12, pp. 862-864 (June 1979).
  12. "Phonon-Assisted Recombination and Stimulated Emission in Multiple Quantum-Well MO-CVD AlxGa1-xAs-GaAs Heterostructures (Lz = 50Å, )," R. M. Kolbas, N. Holonyak, Jr., B. A. Vojak, K. Hess, M. Altarelli, R. D. Dupuis, and P. D. Dapkus, Solid State Communications. Vol. 31, No. 12, pp. 1033-1037 (September 1979).
  13. "Phonon-Sideband MO-CVD Quantum-Well AlxGa1-xAs-GaAs Heterostructure Laser," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, M. Altarelli, R. D. Dupuis, and P. D. Dapkus, Applied Physics Letters Vol. 34, No. 8, pp. 502-505 (April 1979).
  14. "Continuous Room-Temperature Multiple-Quantum-Well AlxGa1-xAs-GaAs Injection Lasers Grown by Metalorganic Chemical Vapor Deposition," R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., and R. M. Kolbas, Applied Physics Letters Vol. 35, No. 7, pp. 487-489 (October 1979).
  15. "Phonon-Assisted Recombination in a Multiple-Quantum Well LPE InP-In1-xGaxP1-zAsz Heterostructure Laser," E. A. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas, Applied Physics Letters Vol. 35, No. 1, pp. 45-47 (July 1979).
  16. "Phonon-Assisted Recombination and Stimulated Emission in Quantum-Well AlxGa1-xAs-GaAs Heterostructures," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus, J. Applied Physics Vol. 51, No. 3, pp. 1328-1337 (March 1980).
  17. "Quantum-Well InP-In1-xGaxP1-zAsz Heterostructure Lasers Grown by Liquid Phase Epitaxy (LPE)," E. A. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas, J. Electronic Materials, Vol. 9, No. 1, pp. 1-27 (January 1980).
  18. "Quantum-Well Heterostructure Lasers," N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis and P. D. Dapkus, IEEE J. Quantum Electronics QE-16, No. 2, pp. 170-186 (February 1980).
  19. "Room-Temperature High-Energy Continuous Laser Operation of Metalorganic Chemical Vapor Deposited AlxGa1-xAs-GaAs Quantum-Well Heterostructures," R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig and B. A. Vojak, Pis'ma Zh. Tekh. Fiz 5, 132-139 (February 12, 1979); Soviet Technical Physics Letters 5, 52-54 (February 1979).
  20. "Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition," R. D. Dupuis, P. D. Dapkus, R. M. Kolbas and N. Holonyak, Jr., IEEE J. Quantum Electronics QE-15, No. 8, pp. 756-761 (August 1979).
  21. "Planar Optical Sources and Detectors for Monolithic Integration with GaAs MESFET Electronics," R. Kolbas, J. Carney, J. Abrokwah, E. Kalweit, M. Hitchell, Integrated Optics II, edited by D. G. Hall, Proc. SPIE 321, pp. 94-102 (1982).
  22. "Gigabit Optoelectronic Transmitter," J. K. Carney, M. J. Helix, R. M. Kolbas, published in the record of the GaAs IC Symposium, Phoenix (October 1983).
  23. "Integrated Optoelectronic Transmitter," J. Carney, M. Helix, R. Kolbas, S. Jamison, and S. Ray, Integrated Optics III, L. Hutcheson (editor), Proc. SPIE 408, pp. 121-128 (1983).
  24. "Planar Monolithic Integration of a Photodiode and a GaAs Preamplifier," R. M. Kolbas, J. Abrokwah, J. K. Carney, D. H. Bradshaw, B. R. Elmer, J. R. Biard, Applied Physics Letters Vol. 43, No. 9, pp. 821-823 (November 1983).
  25. "Planar Monolithic Integration of a Photodiode and a GaAs MESFET Preamplifier," R. M. Kolbas, J. Abrokwah, J. K. Carney, D. H. Bradshaw, B. R. Elmer, J. R. Biard, 41st Annual Device Research Conference, June 20-23, 1983, University of Vermont, Burlington, Vermont. IEEE Transactions Electron Devices Vol. 30, No. 11, p. 1611 (November 1983).
  26. "Man Made Quantum Wells, A New Perspective on the Finite Square Well Problem," R. M. Kolbas and N. Holonyak, Jr., American Journal of Physics, Vol. 52, No. 5, pp. 431-437 (May 1984).
  27. "GaAs-AlGaAs Multiquantum-Well Visible Laser Grown by Molecular Beam Epitaxy," M. Mashita, R. M. Kolbas, C. Nozaki, Y. Ashizawa, H. Furuyama and Y. Uematsu, 15th Conference on Solid State Devices and Materials, Tokyo (August 30 - September 1, 1983).
  28. "Monolithic Optoelectronic/Electronic Circuits," J. K. Carney, M. J. Helix, R. M. Kolbas, S. A. Jamison, S. Ray, published in the record of the GaAs IC Symposium, pp. 38-41, New Orleans (October 1982).
  29. "Operation of Monolithic Laser/Multiplexer Optoelectronic IC," J. K. Carney, M. Helix, R. M. Kolbas, Optical Interfaces for Digital Circuits and Systems, R. A. Milano (ed.), SPIE 466, pp. 52-59 (1984).
  30. "Planar Monolithic Fiber Optic Receiver Chip on a GaAs Semi-Insulating Substrate," R. M. Kolbas, J. K. Carney, M. D. Longerbone, E. L. Kalweit, S. T. Reimer, Optical Interfaces for Digital Circuits and Systems, R. A. Milano (ed.), SPIE 466, pp. 59-64 (1984).
  31. "Monolithic Matrix Addressable AlGaAs/GaAs Visible LED Array," S. Ray, R. M. Kolbas, M. J. Hafich and B. E. Dies, IEEE Transactions on Electron Devices, Vol. ED-33, No. 6, pp. 845-849 (June 1986).
  32. "Resonant Tunneling Transport at 300K in GaAs-AlGaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition," S. Ray, P. Ruden, V. Sokolov, R. Kolbas, T. Boonstra and J. Williams, Applied Physics Letters, 48, pp. 1666-1668 (16 June 1986).
  33. "Optical Characterization of Pseudomorphic InxGa1-xAs-GaAs Single-Quantum-Well Heterostructures," N. G. Anderson, W. D. Laidig, R. M. Kolbas and Y. C. Lo, J. Applied Physics Vol. 60, No.7, pp. 2361-2367 (1 October 1986).
  34. "Transverse Junction Stripe Laser with a Lateral Heterobarrier by Diffusion Enhanced Alloy Disordering," Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh and R. M. Kolbas, Applied Physics Letters Vol. 49, No. 14, pp. 835-837 (6 October 1986).
  35. "High Efficiency Carrier Collection and Stimulated Emission in Thin (50Å) Pseudomorphic InxGa1-xAs Quantum Wells," N. G. Anderson, Y. C. Lo and R. M. Kolbas, Applied Physics Letters Vol. 49, No. 13, pp. 758-760 (29 September 1986).
  36. "Room Temperature Negative Differential Resistance in Strained Layer GaAs-AlGaAs-InGaAs Quantum Well Heterostructures," G. S. Lee, K. Y. Hsieh and R. M. Kolbas, Applied Physics Letters Vol. 49, No. 22, pp. 1528-1530 (1 December 1986).
  37. "Transverse Junction Stripe Laser with a Lateral Heterobarrier by Diffusion-Enhanced Disordering," R. M. Kolbas, Y. J. Yang, Y. C. Lo, G. S. Lee, and K. Y. Hsieh, 44th Annual Device Research Conference, Burlington, VT, June 1986; Abstract published in IEEE Transactions on Electron Devices ED-33, No. 11, p. 1864 (Nov. 1987).
  38. "Stimulated Emission from Ultra-Thin (6.6Å) InAs/GaAs Quantum Well Heterostructures Grown by Atomic Layer Epitaxy," M. A. Tischler, N. G. Anderson, R. M. Kolbas and S. M. Bedair, Applied Physics Letters, Vol. 50, No. 18, pp. 1266-1268 (4 May 1987).
  39. "Optical Properties of Pseudomorphic InxGa1-xAs Quantum Wells," N. G. Anderson, Y. C. Lo and R. M. Kolbas, "Interfaces Superlattices and Thin Films," editors, J. D. Dow and I. K. Schuller, (Materials Research Society, Pittsburgh, 1987). Also presented at Fall Meeting of the Materials Research Society, Boston, MA (December 1986).
  40. "InAs/GaAs Quantum Well Lasers Grown by Atomic Layer Epitaxy," M. A. Tischler, N. G. Anderson, R. M. Kolbas and S. M. Bedair, Growth of Compound Semiconductors, R. L. Gunshor and H. Morkoc, editors SPIE 796 (1987). Also presented at SPIE conference Advances in Semiconductor Structures, Bay Point, Florida (March 1987).
  41. "Negative Differential Resistance in a Strained Quantum Well Structure with a Bound State," G. S. Lee, K. Y. Hsieh and R. M. Kolbas, in J. Applied Physics Vol. 62, No. 8, pp. 3453-3456 (15 Oct. 1987).
  42. "Continuous Room Temperature Operation of an InGaAs-GaAs-AlGaAs Strained Layer Laser," Y. J. Yang, K. Y. Hsieh and R. M. Kolbas, Applied Physics Letters Vol. 51, No. 4, pp. 215-217 (27 July 1987).
  43. "Continuous Room Temperature Operation of an InGaAs-GaAs-AlGaAs Strained Layer Quantum Well Laser," Y. J. Yang, K. Y. Hsieh and R. M. Kolbas, 45th Annual Device Research Conference, June 22-24, 1987, University of California, Santa Barbara, California. Abstract published in IEEE Transactions on Electron Devices, ED-34, No. 11, p. 2379 (Nov. 1987).
  44. "CdTe Metal Semiconductor Field Effect Transistors," D. L. Dreifus, R. M. Kolbas, K. A. Harris, R. N. Bicknell, R. L. Harper and J. F. Schetzina, Applied Physics Letters Vol. 51, No. 12, pp. 931-933 (21 Sept. 1987).
  45. "Strained Layer and Lattice Matched Transverse Junction Stripe Quantum Well Lasers for Continuous Room Temperature Operation," R. M. Kolbas, Y. J. Yang and K. Y. Hsieh, Superlattices and Microstructures, Vol. 4, No 4/5, pp. 603-608 (1988).
  46. "Negative Differential Resistance in InGaAs Strained Layer Heterostructures," G. S. Lee, K. Y. Hsieh and R. M. Kolbas, Superlattices and Microstructures, Vol. 4, No. 4/5, pp. 537-540 (1988).
  47. "Electrical Properties of CdTe Metal-Semiconductor Field Effect Transistors," D. L. Dreifus, R. M. Kolbas, J. R. Tassitino, R. L. Harper, R. N. Bicknell and J. F. Schetzina, Proc. of 1987 U.S. Workshop on Mercury Cadmium Telluride, New Orleans, LA (6-8 Oct. 1987); Published in J. Vac. Sci. Technology Vol. A6, No. 4, pp. 2722-2724 (July/Aug. 1988).
  48. "Stimulated Emission in Ultra Thin (20Å) AlxGa1-xAs-GaAs Single Quantum-Well Heterostructures," Y. C. Lo, K. Y. Hsieh and R. M. Kolbas, Applied Physics Letters Vol. 52, No. 22, pp. 1853-1855 (30 May 1988).
  49. "Strained Layer InGaAs-GaAs-AlGaAs Photopumped and Current Injection Lasers," R. M. Kolbas, N. G. Anderson, W. D. Laidig, Y. K. Sin, Y. C. Lo, K. Y. Hsieh and Y. J. Yang, IEEE J. Quantum Electronics, Vol. 24, No. 8, pp. 1605-1613 (8 August 1988).
  50. "Ion Beam Mixing of GaAs/AlGaAs Superlattice and its Relation to Amorphization," P. Pronko, A. W. McCormick, D. B. Patrizio, A. K. Rai, R. M. Kolbas and B. S. Frank, Mat. Res. Soc. Symp. Vol. 147, pp. 297-302 (1989).
  51. "Photocurrent Enhancement in a GaAs Metal-Semiconductor-Metal Photodetector Due to Ultra Small Islands," W. C. Koscielniak, R. M. Kolbas, M. A. Littlejohn and B. W. Licznerski, Applied Physics Letters Vol. 52, No. 12, pp. 987-989 (21 March 1988).
  52. "Performance of a Near-Infrared GaAs Metal-Semiconductor-Metal (MSM) Photodetector with Islands," W. C. Koscielniak, R. M. Kolbas and M. A. Littlejohn, IEEE Electron Device Letters, Vol. 9, No. 9, pp. 485-487 (Sept. 1988).
  53. "Growth and Properties of Doped CdTe Films Grown by Photoassisted Molecular Beam Epitaxy," S. Hwang, R. L. Harper, K. A. Harris, N. C. Giles, R. N. Bicknell, J. F. Schetzina, D. L. Dreifus, R. M. Kolbas and M. Chu, J. Vac. Sci. Technology Vol. B6, No. 2, pp. 777-778, (Mar./Apr. 1988).
  54. "Diluted Magnetic Semiconductor Cd1-xMnxTe Schottky Diodes and Field Effect Transistors," D. L. Dreifus, R. M. Kolbas, R. L. Harper, J. R. Tassitino, S. Hwang and J. F. Schetzina, Applied Physics Letters Vol. 53, No. 14, pp. 1279-1281 (3 Oct. 1988).
  55. "Enhanced/Suppressed Interdiffusion of AlGaAs-GaAs Interfaces by Controlling Gallium Vacancies," K. Y. Hsieh, Y. C. Lo, J. H. Lee and R. M. Kolbas, 1988 International Symposium on GaAs and Related Compounds, Sept. 12-14, 1988, Atlanta, GA, published in Institute of Physics Conference, Series No. 96, pp. 393-396, J. Revill, editor (London, 1988).
  56. "Phonon-Assisted Stimulated Emission in Thin (<55Å) AlGaAs-GaAs-AlGaAs Single Quantum Wells," Y. C. Lo and R. M. Kolbas, Applied Physics Letters Vol. 53, No. 23, pp. 2266-2268, (5 Dec. 1988).
  57. "Carrier Recombination Dynamics in Thin InGaAs-GaAs Single Quantum Well Heterostructures", S. D. Benjamin, N. G. Anderson and R. M. Kolbas, Quantum Electronics and Laser Science Conference 1989 Technical Digest Series Vol. 12, pp. 84- 85 (1989).
  58. "Laser Properties and Carrier Collection in Ultra-Thin Quantum Well Heterostructures," R. M. Kolbas, Y. C. Lo and J. H. Lee, IEEE Journal Quantum Electronics Vol. 26, No. 1, pp. 25-31 (Jan. 1990).
  59. "Time Resolved Phonon Assisted Stimulated Emission in Quantum Well Heterostructures," 1989 Device Research Conference; IEEE Transactions Electron Devices Vol. 36, No. 11, p. 2613 (Nov. 1989).
  60. "Stimulated Emission from Monolayer Thick Quantum Well Heterostructures," J. H. Lee, K. Y. Hsieh and R. M. Kolbas, 1989 Device Research Conference, IEEE Transactions of Electron Devices Vol. 36, No. 11, p. 2613 (Nov. 1989).
  61. "Enhanced/Suppressed Interdiffusion of InGaAs-GaAs-AlGaAs Strained Layers by Controlling Impurities and Gallium Vacancies," K. Y. Hsieh, Y. L. Hwang, J. H. Lee and R. M. Kolbas, 1989 Electronic Materials Conference, also in the Journal of Electronic Materials, Vol. 19, No. 12, pp. 1417-1423 (Dec 1990).
  62. "Stimulated Emission from Monolayer-Thick AlxGa1-xAs-GaAs Single Quantum Well Heterostructures," J. H. Lee, K. Y. Hsieh, Y. L. Hwang and R. M. Kolbas, Applied Physics Letters Vol. 56, No. 7, pp. 626-628 (12 Feb. 1990).
  63. "Low-Temperature Processing Technology for II-VI Semiconductors," D. L. Dreifus, R. M. Kolbas, B. P. Sneed and J. F. Schetzina, Fall 1989 Proceedings of the Materials Research Society, Proc. 161, pp. 323-?? (1990).
  64. "Photoluminescence and Stimulated Emission from Monolayer Thick Pseudomorphic InAs Single Quantum Well Heterostructures," J. H. Lee, K. Y. Hsieh and R. M. Kolbas, Physics Rev. B. 41, pp. 7684-7684 (15 April 1990).
  65. "Field-Effect Transistors in Hg1-xCdxTe Grown by Photoassisted Molecular Beam Epitaxy," D. L. Dreifus, R. M. Kolbas, J. W. Han, J. W. Cook, Jr. and J. F. Schetzina, J. of Vac. Sci. Tech. Vol. A8, pp. 1221-1225 (March/April 1990).
  66. "Stimulated Visible Light Emission from Ultra-Thin GaAs Single and Multiple Quantum Wells Sandwiched between Indirect-Gap Al0.49Ga0.51As Confining Layers," J. H. Lee, K. Y. Hsieh, Y. L. Hwang and R. M. Kolbas, Applied Physics Letters Vol. 56, No. 20, pp. 1998-2000 (14 May 1990).
  67. "Photoluminescence Characteristics of AlGaN-GaN-AlGaN Quantum Wells Grown by Low Pressure Metalorganic Chemical Vapor Deposition," M. A. Khan, R. A. Skogman, J. M. Van Hove, S. Krishnankutty and R. M. Kolbas, Applied Physics Letters Vol. 56, No. 13, pp. 1257-1259 (26 March 1990).
  68. "Time Resolved Phonon Assisted Stimulated Emission in AlGaAs-GaAs Quantum Wells," S. D. Benjamin, J. H. Lee, Y. L. Hwang, T. Zhang and R. M. Kolbas, Applied Physics Letters 59, No. 3, pp. 351-353, (15 July 1991).
  69. "Effects of a Low Temperature GaAs Buffer Layer on the Interdiffusion of GaAs/AlGaAs Heterostructures During Thermal Annealing," presented at the 6th Conference on Semi-insulating III-V Materials, Toronto, May 13-16, 1990; also published in the proceedings of the 6th Conference on Semi-insulating III-V Materials.
  70. "The Elimination of Carrier Compensation Caused by a Low Temperature MBE Grown GaAs Surface Layer in a GaAs MESFET Structure," W. L. Yin, J. H. Lee, T. Zhang, R. M. Kolbas and U. K. Mishra, presented at the 1990 Electronic Materials Conference; also, paper submitted to the Journal of Electronic Materials.
  71. "Improved Breakdown Voltage in GaAs MESFET's Utilizing Surface Layers of GaAs Grown at a Low Temperature by MBE," W. L. Yin, Y. Hwang, J. H. Lee, R. M. Kolbas, R. J. Trew, and U. K. Mishra, Electron Device Letters 11, No. 12, pp. 561-563 (Dec. 1990).
  72. "A General Derivation of the Density of States Function For Quantum Wells and Superlattices," M. W. Prairie and R. M. Kolbas, Superlattices and Microstructures, Vol. 7, No. 4, pp. 269-277 (1990).
  73. "ZnSe Field Effect Transistors," D. L. Dreifus, B. P. Sneed, J. Ren, J. W. Cook, Jr., J. F. Schetzina and R. M. Kolbas, Applied Physics Letters Vol. 57, No. 16, pp. 1663-1665 (15 Oct. 1990).
  74. "Field Effect Transistors in Hg1-xCdxTe Grown by Photoassisted Molecular Beam Epitaxy," D. L. Dreifus, R. M. Kolbas, J. W. Han, J. W. Cook, Jr., and J. F. Schetzina, J. Vac. Sci. Tech. A8, pp. 1221- ??? (1990).
  75. "ZnSe Light Emitting Diodes," J. Ren, K. A. Bowers, B. Sneed, D. L. Dreifus, J. W. Cook, Jr., J. F. Schetzina, and R. M. Kolbas, Applied Physics Letters Vol. 57, No. 18, pp. 1901-1903 (29 Oct. 1990).
  76. "Dark Current Characteristics of GaAs Metal-Semiconductor-Metal (MSM) Photodetectors," W. C. Koscielniak, J. L. Pelouard, R. M. Kolbas and M. A. Littlejohn, IEEE Trans. Electron Devices ED-37, No. 7 pp. 1623-1629 (July 1990).
  77. "Surface and Bulk Leakage Currents in Transverse Junction Stripe Lasers," Y. K. Sin, K. Y. Hsieh, J. H. Lee and R. M. Kolbas, J. Applied Physics Vol. 69, No. 2, pp. 1081-1090 (15 Jan. 1991).
  78. "InGaAs-GaAs-AlGaAs Strained-Layer Lasers with Heavy Silicon Doping," Y. K. Sin, K. Y. Hsieh, J. H. Lee, Y. Hwang and R. M. Kolbas, J. Applied Physics 70, No. 2, pp. 568-573 (15 July 1991).
  79. "Enhanced/Suppressed Interdiffusion of Lattice Matched and Pseudomorphic III-V Heterostructures by Controlling Ga Vacancies," R. M. Kolbas, Y. L. Hwang, T. Zhang, M. Prairie, K. Y. Hsieh and U. K. Mishra, presented at the Workshop on Multiple Quantum Well Mixing, September 1990; Optical and Quantum Electronics 24, pp. S805-S812, (1991).
  80. "Growth of High Optical and Electrical Quality GaN layers using Low-Pressure Metal Organic Chemical Vapor Deposition," M. Asif Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson, S. Krishnankutty and R. M. Kolbas, Applied Physics Letters Vol. 58, No. 5, pp. 526-527 (4 Feb. 1991).
  81. "Diffusion of Zinc into GaAs Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperatures," Y. K. Sin, Y. Hwang, T. Zhang and R. M. Kolbas, Journal of Electronic Materials, Vol. 20, No. 6, pp. 465-469 (June 1991).
  82. "Monolayer Thick GaSbAs-GaAs Strained Layer Quantum Well Lasers," J. H. Lee, T. Zhang, and R. M. Kolbas, Conference on Laser and Electro-Optics 1991 Technical Digest Series, Vol. 10, pp. 334-335.
  83. "Photoluminescence Characterization of AlxGa1-xN Pseudomorphic Quantum Wells and Calculations of Strain Induced Bandgap Shifts," S. Krishnankutty, R. M. Kolbas, M. Asif Khan, J. N. Kuznia, J. M. Van Hove and D. T. Olson, presented at 1991 Electronics Materials Conference, U. of Colorado, Boulder; also Journal of Electronic Materials, Vol. 21, No. 6, pp. 609-612 (1992).
  84. "Optical Characterization of AlGaN-GaN-AlGaN Quantum Wells," S. Krishnankutty, R. M. Kolbas, M. A. Khan, J. N. Kuznia, J. M. Van Hove and D. T. Olson, Journal of Electronic Materials, Vol. 21, No. 4, pp. 437-440 (April 1992).
  85. "Visible Light Emission from Silicon Nanoparticles," D. Zhang, R. M. Kolbas, P. Mehta, A. K. Singh, D. J. Lichtenwalner, K. Y. Hsieh and A. I. Kingon, Materials Research Society, Fall Meeting, Dec. 2-6, 1991, Boston MA; "Light Emission from Silicon," Editors, S. S. Iyer, L. T. Canham and R. T. Collins (Proceedings of Materials Research Society, Pittsburgh, PA, 1991).
  86. "Evaluation of LT GaAs for High Speed Electronic and Analog Optoelectronic Applications," U. K. Mishra and R. M. Kolbas, Materials Research Society, Fall Meeting Dec. 2-6, 1991, Boston MA; "Low Temperature (LT) GaAs and Related Materials", Editors G. L. Witt, R. Calawa, U. Mishra and E. Weber (Proceedings of Materials Research Society, Pittsburgh, PA, 1991).
  87. "Investigation of the Electronic Properties of In-Situ Annealed Low-Temperature Gallium-Arsenide Grown by Molecular Beam Epitaxy," L. W. Yin, J. P. Ibbetson, M. M. Hashemi, A. C. Gossard, U. K. Mishra, Y. Hwang, T. Zhang and R. M. Kolbas, Applied Physics Letters Vol. 60, No. 16, pp. 2005-2007 (20 April 1992).
  88. "Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs," Y. Hwang, D. Zhang, T. Zhang, M. Mytych and R. M. Kolbas, Materials Research Society, Fall Meeting Dec. 2-6, 1991, Boston MA; "Low Temperature (LT) GaAs and Related Materials" Editors G. L. Witt, R. Calawa, U. Mishra and E. Weber (Proceedings of Material Research Society, Pittsburgh, PA, 1991).
  89. "Dose Effects in Si FIB-Mixing of Short Period AlGaAs/GaAs Superlattices," A. J. Steckel, P. Chen, A. Choo, H. Jackson, J. T. Boyd, P. P. Pronko, A. Ezis and R. M. Kolbas, Materials Research Society, Fall Meeting Dec. 2-6, 1991, Boston, MA; "Advanced II-V Compound Semiconductor Growth, Processing and Devices," Editors S. J. Pearton, J. M. Zavada and D. K. Sadana, (Proceedings of Material Research Society, Pittsburgh, PA 1991).
  90. "Vertical Cavity Surface Emitting Laser with a Submonolayer Thick InAs Active Layer," S. D. Benjamin, T. Zhang, Y. L. Hwang, M. S. Mytych and R. M. Kolbas, Applied Physics Letters 60, No. 15, pp. 1800-1802 (13 April 1992).
  91. "Origin of Photoluminescence from Er3+ Centers in GaAs and Al0.4Ga0.6As Grown by Molecular Beam Epitaxy," T. Zhang, Y. Hwang, J. Sun, N. V. Edwards, P. J. Caldwell and R. M. Kolbas, Journal of Electronic Materials Vol. 22, No. 9, pp. 1137-1140 (September 1993).
  92. "Monolithically Integrated SQW Laser and HBT Laser Driver Via Selective OMVPE Regrowth," D. B. Slater, Jr., P. M. Enquist, J. A. Hutchby, F. E. Reed, A. S. Morris, R. M. Kolbas, R. J. Trew, A. S. Lujan and J. W. Swart, IEEE Photonics Technology Letters 5, No. 7, pp. 791-794 (7 July 1993).
  93. "Molecular Beam Epitaxial Growth and Optical Characterization of Erbium Doped GaAs/AlGaAs Heterostructures," T. Zhang, D. Zhang, F. E. Reed, N. V. Edwards, D. E. Moxey, R. M. Kolbas, and P. J. Caldwell, Presented at the 1993 Electronic Materials Conference, Santa Barbara, CA.
  94. "Photoluminescence Study of Energy Transfer Processes in Erbium Doped AlxGa1-xAs Grown by MBE," T. Zhang, J. Sun, N. V. Edwards, D. E. Moxey, R. M. Kolbas and P. J. Caldwell, Materials Research Society Meeting, San Francisco, Spring 1993; Also, Materials Research Society Symp. Proc. Vol. 301, "Rare Earth Doped Semiconductors," G. S. Pomrenke, P. B. Klein, D. W. Langer, Editors, pp. 257-262 (Proceedings of Material Research Society, Pittsburgh, PA 1993).
  95. "Temperature Investigation of the Gate-Drain Diode power GaAs-MESFET with Low-Temperature-grown (Al)GaAs Passivation," L. W. yin, N. X. Nguyen, Y. Hwang, J. P. Ibbetson, R. M. Kolbas, A. C. Gossard and U. K. Mishra, Journal of Electronic Materials Vol. 22, No. 12, pp. 1503-1505 (Dec 1993).
  96. "Modeling, Analysis and Simulation of an Optical Time Division Multiple-Access Network Architecture," M. Devetsikiotis, Q. G. Zhou, G. R. Cato, J. K. Townsend and R. M. Kolbas, Proceedings of SPIE International Symposium OE/Fibers '92, Boston, September 8-11, 1992. SPIE Volume 1790 pp. 2-17, 1992.
  97. "Optoelectronic Properties of GaN, AlGaN, and AlGaN-GaN Quantum Well Heterostructures," R. M. Kolbas and S. Krishnankutty, LEOS 1993 Summer Topical Meeting Digest on Visible Semiconductor Lasers, July 21-22, 1993, Santa Barbara, CA (IEEE Catalog Number 93TH0549-6, Library of Congress Number 93-77778).
  98. "Two Terminal Bias Induced Dual Wavelength Semiconductor Light Emitter," D. Zhang, F. E. Reed, T. Zhang, N. V. Edwards and R. M. Kolbas, Applied Physics Letters Vol. 63, No. 24, pp. 3367-3369, (13 Dec. 1993).
  99. "Light Emission from Crystalline Silicon and Amorphous Silicon Oxide (SiOx) Nanoparticles," D. Zhang, R. M. Kolbas, P. D. Milewski, D. J. Lichtenwalner, P. Mehta and A. I. Kingon, IEEE Journal of Electronic Materials, Vol. 23, No. 1, pp. 57-62, 1994.
  100. "Three-Terminal Bias Induced Dual Wavelength Semiconductor Light Emitter," F. E. Reed, D. Zhang, T. Zhang, R. M. Kolbas, Applied Physics Letters 65, No. 5, pp. 570-572 (1 Aug. 1994).
  101. "Light Emission from Thermally Oxidized Silicon Nanoparticles," D. Zhang, P. D. Milewski, D. J. Lichtenwalner, R. M. Kolbas, A. I. Kingon and J. M. Zavada, Applied Physics Letters 65, No. 21, pp. 2684-2686, (21 Nov. 1994).
  102. "Optical Characteristics of Erbium Doped AlGaAs-GaAs Heterostructures," D. Zhang, T. Zhang, R. M. Kolbas, and J. M. Zavada, Presented at the ICSICT '95 International Conference on Solid State and Integrated Circuit Technology, Oct. 24-28, 1995. Paper published in Proceedings of the Fourth International Conference on Solid-State and Integrated-Circuit Technology (Beijing, China), Editors: G. L. Baldwin, Z. Li, C. C. Tsai and J. Zhang, pp. 506-508, 1995.
  103. "Light Emission from Silicon Nanoparticles: Mechanisms and Applications", D. Zhang and R. M. Kolbas, Presented at the ICSICT '95 International Conference on Solid State and Integrated Circuit Technology, Oct. 24-28, 1995, Beijing, China. Paper published in Proceedings of the Fourth International Conference on Solid-State and Integrated-Circuit Technology (Beijing, China), Editors: G. L. Baldwin, Z. Li, C. C. Tsai and J. Zhang, pp. 54-56, 1995.
  104. "Bias Induced Color-Tuned Semiconductor Devices," R. M. Kolbas, F. E. Reed, and D. Zhang, Presented at the ICSICT '95 International Conference on Solid State and Integrated Circuit Technology, Oct. 24-28, 1995, Beijing, China. Paper published in Proceedings of the Fourth International Conference on Solid-State and Integrated-Circuit Technology, Editors: G. L. Baldwin, Z. Li, C. C. Tsai and J. Zhang, pp. 151-153, 1995.
  105. "Investigation of n-type and p-type Doping of GaN Epitaxial Growth in a Mass Production Scale Multiwafer-Rotating-Disc Reactor," C. Yuan, T. Salagaj, A. Gurary, A. G. Thompson, W. Kroll, R. A. Stall, C. Y. Hwang, M. Schurman, Y. Li, W. E. Mayo, Y. Yu, S. Krishnankutty, I. K. Shmagin, R. M. Kolbas and S. J. Pearton, J. Vac. Science Tech. B, Vol. 13, No.5, p. 2075-2080 (Sept./Oct. 1995).
  106. "High Quality P-type GaN Deposition on c-Sapphire Substrates in a Multiwafer Rotating-Disk Reactor," C. Yuan, T. Salagaj, A. Gurary, P. Zawadzki, C. S. Chern, W. Kroll, R. A. Stall, Y. Li, M. Schurman, C. Y. Hwang, W. E. Mayo, Y. Lu, S. J. Pearton, S. Krishnankutty, and R. M. Kolbas, Journal of the Electrochemical Society Vol. 142, No. 9, pp. L163-L165 (September 1995).
  107. "Growth and Fabrication of GaN-InGaN Microdisk Laser Structures," C. R. Abernathy, S. J. Pearton, J. D. MacKenzie, J. R. Mileham, S. R. Bharatan, V. Krishnamoorthy, K. S. Jones, M. Hagerott-Crawford, R. J. Shul, S. P. Kilcoyne, J. M. Zavada, D. Zhang and R. M. Kolbas, Solid State Electronics Vol. 39, No. 2, pp. 311-313 (February 1996).
  108. "Effect of Shroud Flow on High Quality InxGa1-xN/GaN Double Heterojunction Deposition in a Production Scale Multi-Wafer-Rotating-Disc MOCVD Reactor," C. Yuan, T. Salagaj, W. Kroll, R. A. Stall, M. Schurman, C. Y. Hwang, Y. Li, W. E. Mayo, Y. Lu, S. Krishnankutty and R. M. Kolbas, J. Electronic Materials Vol. 25, No. 4, pp. 749-753 (April 1996).
  109. "Optical Absorption and Stimulated Emission from Ultrathin Single Quantum Wells," D. Zhang and R. M. Kolbas, Solid State Communications Vol. 98, No. 7, pp. 645-649 (May 1996).
  110. "Strained-Induced Phase Separation in Annealed Low-Temperature Grown Al0.3Ga0.7As," K. C. Hsieh, K. Y. Hsieh, Y. L. Hwang, T. Zhang and R. M. Kolbas, Applied Physics Letters Vol. 68, No. 13, pp. 1790-1792 (25 March 1996).
  111. "The Growth of p-type epitaxial GaN films on Sapphire Substrates in a Production Scale Multi-wafer Rotating Disc MOCVD Reactor," C. Yuan, T. Salagaj, A. Gurary, W. Kroll, R. A. Stall, C. Y. Hwang, M. Schurman, Y. Li, W. E. Mayo, Y. Lu, S. Krishnankutty, R. M. Kolbas and S. J. Pearton, Silicon Carbide and Related Materials 1995, Vol. 142, pp. 855-858 (1996).
  112. "Production of p-type GaN in a multi-wafer-rotating-disc Reactor," C. Yuan, R. Walker, T. Salagaj, A. Gurary, W. Kroll, R. A. Stall, M. Schurman, C. Y. Hwang, Y. Li, Y. Lu, W. E. Mayo, Y. Lu, S. Krishnankutty, R. M. Kolbas and S. J. Pearton, Compound Semiconductors 1995 Vol. 145, pp. 133-136 (1996).
  113. "Photoluminescence Characteristics of GaN/InGaN/GaN Quantum Wells," I. K. Shmagin, J. F. Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, A. C. Abare, L. A. Coldren, U. K. Mishra and S. P. DenBaars, J. Electronic Materials, Vol. 26, No. 3, pp. 325-329, (March 15, 1997).
  114. "Observation of Lasing from Photopumped InGaN/GaN Heterostructures in an Edge Emitting Configuration," I. K. Shmagin, J F. Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, U. K. Mishra, and S. P. DenBaars, J. Applied Physics Vol. 81, No. 4, pp. 2021-2023, (15 February 1997).
  115. "Quantum Well Heterostructure Lasers," R. M. Kolbas in Properties of Gallium Arsenide, Third Edition, Edited by M. R. Brozel and G. E. Stillman, Datareviews Series No. 16, pp. 887-905, (INSPEC 1996), ISBN 0 85296 885 X.
  116. "Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures", I. K. Shmagin, J. F. Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, U. K. Mishra, and S. P. DenBaars, Materials Research Society Meeting, Boston, MA, Dec. 2-7, 1996; Materials Research Society Symp. Proc. Vol. 499, III-V Nitrides, F. A. Ponce, T. D. Moustakas, I. Akasaki, B. A. Monemar, Editors, pp. 1209-1214 (Proceedings of Material Research Society, Pittsburgh, PA 1997).
  117. "Photoluminescence from Mechanically Milled Si and SiO2 Powders", T. D. Shen, I. K. Shmagin, C. C. Koch, R. M. Kolbas, Y. Fahmy, L. Bergman, R. J. Nemanich, M. T. McClure, Z. Sitar, and M. X. Quan, Physics Rev. B Vol. 55, No. 12, pp. 7615-7623 (15 March 1997).
  118. "Growth of Bulk AlN and GaN Single Crystals by Sublimation", C. M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, I. K. Shmagin, J. F. Muth, R. M. Kolbas, R. Nemanich, and R. F. Davis, Materials Research Society Meeting, Boston, MA, Dec. 2-7, 1996; Materials Research Society Symp. Proc. Vol. 499, III-V Nitrides, F. A. Ponce, T. D. Moustakas, I. Akasaki, B. A. Monemar, Editors, pp. 41-46 (Proceedings of Material Research Society, Pittsburgh, PA 1997).
  119. "Growth of Bulk InGaN films and Quantum Wells by Atmospheric Pressure Metalorganic Chemical Vapour Deposition," S. Keller, B. P. Keller, D. Kapolnek, U. K. Mishra, S. P. DenBaars, I. K. Shmagin, R. M. Kolbas and S. Krishnankutty, J. Crystal Growth Vol. 170, pp. 349-352 (Jan. 1997).
  120. "Optical Metastability in Bulk GaN Single Crystals", I. K. Shmagin, J. F. Muth, J. H. Lee, R. M. Kolbas, C. M. Balkas, Z. Sitar and R. F. Davis, Applied Physics Letters Vol. 71, No. 4, pp. 455-457 (28 July 1997).
  121. "Absorption Coefficient, Energy Gap, Exciton Binding Energy and Recombination Lifetime of GaN Obtained from Transition Measurements," J, F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B. P. Keller, U. K. Mishra and S. P. DenBaars, Applied Physics Letters Vol. 71, No. 18, pp. 2572-2574 (3 November 1997).
  122. "Optical Data Storage in InGaN/GaN Heterostructures," I. K. Shmagin, J. F. Muth, R. M. Kolbas, R. D. Dupuis, P. A. Grudowski, C. J. Eiting, J. Park, B. S. Shelton and D. J. H. Lambert, Applied Physics Letters Vol. 71, No. 10, pp. 1382-1384 (8 September 1997).
  123. "Optical Metastability in InGaN/GaN Heterostructures," I. K. Shmagin, J. F. Muth, R. M. Kolbas, R. D. Dupuis, P. A. Grudowski, C. J. Eiting, J. Park, B. S. Shelton, and D. J. H. Lambert, Compound Semiconductors 1997, Vol. 156, pp. 375-378 (1998).
  124. "Reconfigurable Optical Properties in InGaN/GaN Quantum Wells," I. K. Shmagin, J. F. Muth, R. M. Kolbas, M. P. Mack, A. C. Abare, S. Keller, L. A. Coldren, U. K. Mishra and S. P. DenBaars, Applied Physics Letters Vol. 71, No. 11, pp. 1455-1457 (15 September 1997).
  125. "Microdisk Laser Structures formed in III-V Nitride Epilayers," J. M. Zavada, C. R. Abernathy, S. J. Pearton, J. D. Mackenzie, J. R. Mileham, R. G. Wilson, R. N. Schwartz, M. Haggerott-Crawford, R. J. Shul, S. P. Kilcoyne, D. Zhang and R. M. Kolbas, Solid State Electronics, Vol. 41, No. 2, pp. 353-357 (Feb. 1997).
  126. "Optical and Structural Characterization of InGaN Quantum-Well Heterostructures Grown by Metalorganic Chemical Vapor Deposition," R. D. Dupuis, P. A. Grudowski, C. J. Eiting, I. K. Shmagin, R. M. Kolbas and S. J. Rosner, Institute of Physics Conference Series Compound Semiconductors 1997, Vol. 156, pp. 231-234 (1998).
  127. "Visible-blind GaN Schottky barrier detectors grown on Si (111)," A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth and R. M. Kolbas, Applied Physics Letters Vol. 72, No. 5, pp. 551-553 (2 Feb. 1998).
  128. "Growth of High Quality Single Crystal ZnO Films on Sapphire by Pulsed Laser Ablation," A. K. Sharma, K. Dovidenko, S. Oktyabrsky, D. E. Moxey, J. F. Muth, R. M. Kolbas, and J. Narayan, Materials Research Society Meeting, Spring 1998; Materials Research Society Symp. Proc. Vol. 526, "Advances in Laser Deposition of Materials", Editors, R. Singh, D. Lowndes, D. Chrisey, E. Fogarassy and J. Narayan, pp. 305-?? (Proceedings of Material Research Society, Pittsburgh, PA 1998).
  129. "Excitonic Structure and Absorption Coefficient Measurements of ZnO Single Crystal Epitaxial Films Deposited by Pulsed Laser Deposition," J. F. Muth, R. M. Kolbas, A. K. Sharma, S. Oktyabrsky and J. Narayan, Journal of Applied Physics, Vol. 85, No. 11, pp. 7884-7887 (1 June 1999).
  130. "Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys," J. F. Muth, J. D. Brown, M. A. L. Johnson, Zhonghai Yu, R. M. Kolbas, J. W. Cook, Jr. and J. F. Schetzina, Material Research Society Fall Meeting 1998 (Paper G5.2). Published in MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, pp. U510-U515, (Suppl. 1, 1999)
  131. "Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition," Q. Wei, A. K. Sharma, R. J. Naratan, N. M. Ravindra, S. Oktyabrsky, J. Sankar, J. F. Muth, R. M. Kolbas, and J. Narayan, in "Advances in Laser Deposition of Materials", edited by R. Singh, D. Lowndes, D. Chrisey, E. Fogarassy, and J. Narayan, Proceedings of the Materials Research Society Vol. 526, pp. 331-?? (1998).
  132. "Germanium Nanostructures Fabricated by Pulsed Laser Deposition," K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, and R. M. Kolbas, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Canham, M. Sailor, K. Tanaka, and C. C. Tsai, Proceedings of the Materials Research Society Vol. 536, Boston, MA, 1998.
  133. "Optical Properties of Wide Bandgap III-V Nitride Semiconductors," R. M. Kolbas, I. K. Shmagin and J. F. Muth, 1998 5th International Conference on Solid State and Integrated Circuit Technology, Editors: Min Zhang and King Ning Tu, IEEE Press ISBN 0-7803-4306-9, pp. 609-612.
  134. "Linear Optical Properties of a Heavily Mg-doped Al0.09Ga0.91N Epitaxial Layer," M. J. Bergmann, U. Ozgur, H. C. Casey, J. F. Muth, Y. C. Chang, R. M. Kolbas, R. A. Rao, C. B. Eom, and M. Schurman, Applied Physics Letters, Vol. 74, No. 21, pp. 3188-3190 (24 May 1999).
  135. "Effect of Growth Temperature on Point Defect Density of Unintentionally Doped GaN Grown by MOCVD and HVPE," V. A. Joshkin, C. A. Parker, S. M. Bedair, J. F. Muth, I. K. Shmagin, R. M. Kolbas, E. L. Piner, R. J. Molnar, J. Applied Physics Vol. 86, No. 1, pp. 281-288 (1 July 1999).
  136. "Optical and Structural Studies of Ge Nanocrystals Embedded in an AlN Matrix by Pulsed Laser Deposition," K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng and R. M. Kolbas, Applied Physics Letters, Vol. 75, No. 9, pp. 1222-1224 (30 Aug. 1999).
  137. "Optical and Structural Properties of Epitaxial MgxZn1-xO Alloys," A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas and O.W. Holland, Applied Physics Letters, Vol. 75, No. 21, pp. 3327-3329 (22 Nov. 1999).
  138. "Quantum Confinement of the E1 and E2 Transitions in Ge Quantum Dots Embedded in an Al2O3 or AlN Matrix," C. W. Teng, J. F. Muth, R. M. Kolbas, K. M. Hassan, A. K. Sharma, A. Kvit and J. Narayan, Applied Physics Letters, Vol. 76, No. 1, pp. 43-45 (3 Jan. 2000).
  139. "Growth and Characterization of GaN Single Crystals," C. M. Balkus, Z. Sitar, L. Bergman, I. K. Shmagin, J. F. Muth, R. J. Nemanich and R. F. Davis, J. Crystal Growth, Vol. 208, pp. 100-106, (Jan. 2000).
  140. "Size Effect in Germanium Nanostructures Fabricated by Pulsed Laser Deposition," K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng and R. M. Kolbas, in Nanophase and Nanocomposite Materials III, edited by H. Hahn, S. Komarneni and J. C. Parker, Materials Research Society Proceedings, Vol. 581 (2000).
  141. "Quantum Confinement of E1 and E2 transitions in Ge Quantum Dots Embedded in Al2O3 or an AlN Matrix," C. W. Teng, J. F. Muth, R. M. Kolbas, K. M. Hassan, A. K. Sharma and J. Narayan, in Optical Microstructural Characterization of Semiconductors, edited by N. M. Kalkhoran, J. Piqueras, T. Sekiguchi and M. Selim Unlu, Materials Research Society Proceedings, Vol. 588 (2000).
  142. "Structural and Optical Property Investigations on Mg-Alloying in Epitaxial Zinc Oxide Films on Sapphire," A. K. Sharma, C. Jin, J. Narayan, C. W. Teng, J. F. Muth, R. M. Kolbas and O W. Holland, GaN and Related Alloys, edited by H. Amano, R. M. Feenstra, T. H. Myers and M. S. Shur, MRS Internet Journal of Nitride Semiconductor Research, Vol. 595 (2000).
  143. "Photoluminescence and Electrical Characterization of the Two-Dimensional Electron Gas in a Si Delta-Doped GaN layer," C. W. Teng, M. O. Aboelfotoh, J. F. Muth, R. M. Kolbas and R. F. Davis, Applied Physics Letters, Vol. 78, No. 12, pp. 1688-1690 (19 Mar. 2001).
  144. "Optical Characterization of Wide Band Gap Amorphous Semiconductors (a-Si:C:H): Effect of Hydrogen Dilution," Park, M.; Teng, C. W.; Sakhrani, V.; Mclaurin, M. B.; Kolbas, R. M.; Sanwald, R. C.; Nemanich, R. J.; Hren, J. J.; Cuomo, J. J., Journal of Applied Physics, Vol. 89, No. 2, pp. 1130-1137 (15 Jan. 2001).
  145. "Optical Metastability of Sub-Bandgap (2.2eV) Yellow Luminescence in GaN," Y. C. Chang, A. E. Oberhofer, J. F. Muth, R. M. Kolbas and R. F. Davis Applied Physics Letters Vol. 79, No. 3, pp. 281-283 (16 July 2001).
  146. "Electron-beam-induced optical memory effects in GaN," Y. C. Chang, A. L. Cai, M. A. L. Johnson, J. F. Muth, R. M. Kolbas, Z. J. Reitmeier, S. Einfeldt, and R. F. Davis, Applied Physics Letters 80, No. 15, pp. 2675-2677 (15 April 2002).
  147. "Er-doped AlGaAs native oxides: photoluminescence characterization and process optimization," Kou Leigang, D. C. Hall, C. Strohhofer, A. Polman, Tong Zhang, R. M. Kolbas, R. D. Heller, Jr., R. D. Dupuis, IEEE Journal of Selected Topics in Quantum Electronics Vol. 8, No. 4, pp. 880-890, (July-August 2002).
  148. "X-ray and Raman Analysis of GaN Produced by Ultrahigh-rate Magnetron Sputter Epitaxy," Minseo Park, J.-P. Maria, J. J. Cuomo, Y. C. Chang, J. F. Muth, R. M. Kolbas and R. J. Nemanich, Applied Physics Letters 81, No. 10, pp. 1797-1799 (2 September 2002).
  149. "Optical and structural studies of hydride vapor phase epitaxy grown GaN," Y. C. Chang, A. L. Cai, J. F. Muth, R. M. Kolbas, M. Park, J. J. Cuomo, A. Hanser, and J. Bumgarner, J. Vac. Sci. Technol. A 21, No. 3, pp. 701-705 (May-June 2003).
  150. "Effects of thermal annealing on the metastable optical properties of GaN thin films," Y.C. Chang, R. M. Kolbas, Z. J. Reitmeier, and R. F. Davis, J. Vac. Sci. Technol. A Vol. 24, No. 4, pp.1051-1054 July/Aug 2006.
  151. "Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate," F. S. Al-Ajmi, R. M. Kolbas, J. C. Roberts, P. Rajagopal, J. W. Cook Jr., E. L. Piner, and K. J. Linthicum accepted for publication in Applied Physics Letters.

Archival Journal Publications By Subject

Quantum Well Heterostructure Materials and Devices


Early Quantum Well Heterostructure Lasers
  1. "Single-Thin-Active Layer Visible-Spectrum In1-xGaxP1-zAsz Heterostructure Lasers," R. Chin, N. Holonyak, Jr., R. M. Kolbas, J. A. Rossi, D. L. Keune, and W. O. Groves, J. Appl. Phys. 49, 2551-2556 (April 1978).
  2. "High Energy GaAs Laser Operation (1.775 eV, 77K): Bandfilling in a Metalorganic Chemical Vapor Deposited AlxGa1-xAs-GaAs Quantum Well Heterostructure," R. M. Kolbas, N. Holonyak, R. D. Dupuis, and P. D. Dapkus, Pis'ma Zh. Tekh. Fiz. 4, 69-73 (January 1978); Sov. Tech. Phys. Lett. 4, 28-30 (January 1978).
  3. Bandfilling in Metalorganic Chemical Vapor Deposited AlxGa1-x As-GaAs-AlxGa1-xAs Quantum-Well Heterostructure Lasers," N. Holonyak, Jr., R. M. Kolbas, E. A. Rezek, R. Chin, R. D. Dupuis, and P. D. Dapkus, J. Appl. Phys. 49, 5392-5397 (November 1978).
  4. "Determination of the Indirect Band Edge of GaAs by Quantum-Well Bandfilling Lz =100Å," R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, and N. Holonyak, Jr., Solid State Communications. 17, 531-533 (August 1978).
  5. "Photopumped Laser Operation of MO-CVD AlxGa1-xAs Near a GaAs Quantum Well l > 6200Å, 77K," R. D. Dupuis, P. D. Dapkus, R. M. Kolbas, N. Holonyak, Jr., and H. Shichijo, Appl. Phys. Lett. 33, 596-598 (October 1978).
  6. "Room-Temperature Continuous Operation of Photopumped MO-CVD AlxGa1-xAs-GaAs-AlxGa1-xAs Quantum-Well Lasers," N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, Appl. Phys. Lett. 33, 73-75 (July 1978).
  7. "Low-Threshold Continuous Laser Operation (300-337K) of Multilayer MO-CVD AlxGa1-xAs-GaAs Quantum-Well Lasers," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, Appl. Phys. Lett. 33, 737-739 (October 1978).
  8. "MO-CVD Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, R. D. Dupuis, and P. D. Dapkus, 7th Intl. Symp. on GaAs and Related Compounds, September 24-27, 1978, St. Louis in C. M. Wolfe, editor, Institute Physics Conference Series, No. 45, pp. 387-395 (London, 1979).
  9. "Bevel Cross Sectioning of Ultra-Thin (100Å) III-V Semiconductor Layers," N. Holonyak, Jr., B. A. Vojak, R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, Solid State Electronics 22, 431-433 (April 1979).
  10. "Determination of the Valence-Band Discontinuity of InP-In1-xGaxAszP1-z (x = 0.13, z= 0.29) by Quantum-Well Luminescence," R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, R. M. Kolbas, and E. A. Rezek, Appl. Phys. Lett. 34, 862-864 (June 1979).
  11. "Continuous Room-Temperature Multiple-Quantum-Well AlxGa1-xAs-GaAs Injection Lasers Grown by Metalorganic Chemical Vapor Deposition," R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., and R. M. Kolbas, Appl. Phys. Lett. 35, 487-489 (October 1979).
  12. "Quantum-Well InP-In1-xGaxP1-zAsz Heterostructure Lasers Grown by Liquid Phase Epitaxy (LPE)," E. A.. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas, J. Electronic Materials, Vol. 9, pp. 1-27 (January 1980).
  13. "Quantum-Well Heterostructure Lasers," N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis and P. D. Dapkus, IEEE J. Quantum Electron., QE-16, pp. 170-186 (February 1980).
  14. "Room-Temperature High-Energy Continuous Laser Operation of Metalorganic Chemical Vapor Deposited AlxGa1-xAs-GaAs Quantum-Well Heterostructures," R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig and B. A. Vojak, Pis'ma Zh. Tekh. Fiz 5, 132-139 (February 12, 1979); Sov. Tech. Phys. Lett. 5, 52-54 (February 1979).
  15. "Quantum-Well AlxGa1-xAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition," R. D. Dupuis, P. D. Dapkus, R. M. Kolbas and N. Holonyak, Jr., IEEE J. Quantum Electron., QE-15, pp. 756-761 (August 1979).
  16. "Man Made Quantum Wells, A New Perspective on the Finite Square Well Problem," R. M. Kolbas and N. Holonyak, Jr., American Journal of Physics, 52, pp. 431-437 (May 1984).
  17. "GaAs-AlGaAs Multiquantum-Well Visible Laser Grown by Molecular Beam Epitaxy," M. Mashita, R. M. Kolbas, C. Nozaki, Y. Ashizawa, H. Furuyama and Y. Uematsu, 15th Conference on Solid State Devices and Materials, Tokyo (August 30 - September 1, 1983).
  18. "A General Derivation of the Density of States Function For Quantum Wells and Superlattices," M. W. Prairie and R. M. Kolbas, Superlattices and Microstructures, Vol. 7, No. 4, pp. 269-277 (1990).
  19. "Quantum Well Heterostructure Lasers," R. M. Kolbas in Properties of Gallium Arsenide, Third Edition, Edited by M. R. Brozel and G. E. Stillman, Datareviews Series No. 16, pp. 887-905, (INSPEC 1996), ISBN 0 85296 885 X.


Carrier Collection in Quantum Wells
  1. "Carrier Collection in a Semiconductor Quantum-Well," H. Shichijo, R. M. Kolbas, N. Holonyak, Jr., R. D. Dupuis, and P. D. Dapkus, Solid State Communications. 27, 1029-1032 (September 1978).
  2. "High Efficiency Carrier Collection and Stimulated Emission in Thin (50Å) Pseudomorphic InxGa1-xAs Quantum Wells," N. G. Anderson, Y. C. Lo and R. M. Kolbas, Appl. Phys. Lett. 49, pp. 758-760 (September 1986).
  3. "Stimulated Emission in Ultra Thin (20Å) AlxGa1-xAs-GaAs Single Quantum-Well Heterostructures," Y. C. Lo, K. Y. Hsieh and R. M. Kolbas, Appl. Phys. Lett., 52, pp. 1853-1855 (30 May 1988).
  4. "Laser Properties and Carrier Collection in Ultra-Thin Quantum Well Heterostructures," R. M. Kolbas, Y. C. Lo and J. H. Lee, IEEE Journal Quantum Electronics 26, pp. 25-31 (Jan. 1990).
  5. "Two Terminal Bias Induced Dual Wavelength Semiconductor Light Emitter," D. Zhang, F. E. Reed, T. Zhang, N. V. Edwards and R. M. Kolbas, Appl. Phys. Lett. 63, No. 24, pp. 3367-3369, (13 Dec. 1993).
  6. "Three-Terminal Bias Induced Dual Wavelength Semiconductor Light Emitter," F. E. Reed, D. Zhang, T. Zhang, R. M. Kolbas, Appl. Phys. Lett. 65, No. 5, pp. 570-572 (1 Aug. 1994).
  7. "Bias Induced Color-Tuned Semiconductor Devices," R. M. Kolbas, F. E. Reed, and D. Zhang, Presented at the ICSICT '95 International Conference on Solid State and Integrated Circuit Technology, Oct. 24-28, 1995, Beijing, China. Paper published in Proceedings of the Fourth International Conference on Solid-State and Integrated-Circuit Technology, G. L. Baldwin, Z. Li, C. C. Tsai and J. Zhang, Eds., pp. 151-153, 1995.


Phonons and Phonon-Assisted-Stimulate-Emission in Quantum Wells
  1. "Phonon-Assisted Recombination and Stimulated Emission in Multiple Quantum-Well MO-CVD AlxGa1-xAs-GaAs Heterostructures (Lz = 50Å, Heterostructure)," R. M. Kolbas, N. Holonyak, Jr., B. A. Vojak, K. Hess, M. Altarelli, R. D. Dupuis, and P. D. Dapkus, Solid State Communications. 31, 1033-1037 (September 1979).
  2. "Phonon-Sideband MO-CVD Quantum-Well AlxGa1-xAs-GaAs Heterostructure Laser," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, M. Altarelli, R. D. Dupuis, and P. D. Dapkus, Appl. Phys. Lett. 34, 502-505 (April 1979).
  3. "Phonon-Assisted Recombination in a Multiple-Quantum Well LPE InP-In1-xGaxP1-zAsz Heterostructure Laser," E. A. Rezek, R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, and R. M. Kolbas, Appl. Phys. Lett. 35, 45-47 (July 1979).
  4. "Phonon-Assisted Recombination and Stimulated Emission in Quantum-Well AlxGa1-xAs-GaAs Heterostructures," N. Holonyak, Jr., R. M. Kolbas, W. D. Laidig, B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus, J. Appl. Phys. 51, 1328-1337 (March 1980).
  5. "Phonon-Assisted Stimulated Emission in Thin (< 55Å) AlGaAs-GaAs-AlGaAs Single Quantum Wells," Y. C. Lo and R. M. Kolbas, Appl. Phys. Lett. 53, pp. 2266-2268, (5 Dec. 1988).
  6. "Time Resolved Phonon Assisted Stimulated Emission in Quantum Well Heterostructures," 1989 Device Research Conference; IEEE Transactions Electron Devices 36, No. 11, p. 2613 (Nov. 1989).
  7. "Time Resolved Phonon Assisted Stimulated Emission in AlGaAs-GaAs Quantum Wells," S. D. Benjamin, J. H. Lee, Y. L. Hwang, T. Zhang and R. M. Kolbas, Appl. Phys. Lett. 59, No. 3, pp. 351-353, (15 July 1991).


Strained Layer Quantum Well Heterostructures
  1. "Optical Characterization of Pseudomorphic InxGa1-xAs-GaAs Single-Quantum-Well Heterostructures," N. G. Anderson, W. D. Laidig, R. M. Kolbas and Y. C. Lo, J. Appl. Phys. 60, pp. 2361-2367 (October 1986).
  2. "InAs/GaAs Quantum Well Lasers Grown by Atomic Layer Epitaxy," M. A. Tischler, N. G. Anderson, R. M. Kolbas and S. M. Bedair, Growth of Compound Semiconductors, R. L. Gunshor and H. Morkoc, editors SPIE 796 (1987). Also presented at SPIE conference Advances in Semiconductor Structures, Bay Point, Florida (March 1987).
  3. "Continuous Room Temperature Operation of an InGaAs-GaAs-AlGaAs Strained Layer Laser," Y. J. Yang, K. Y. Hsieh and R. M. Kolbas, Appl. Phys. Lett. 51, pp. 215-217 (27 July 1987).
  4. "Continuous Room Temperature Operation of an InGaAs-GaAs-AlGaAs Strained Layer Quantum Well Laser," Y. J. Yang, K. Y. Hsieh and R. M. Kolbas, 45th Annual Device Research Conference, June 22-24, 1987, University of California, Santa Barbara, California. Abstract published in IEEE Transactions on Electron Devices, ED-34, p. 2379 (Nov. 1987).
  5. "Strained Layer and Lattice Matched Transverse Junction Stripe Quantum Well Lasers for Continuous Room Temperature Operation," R. M. Kolbas, Y. J. Yang and K. Y. Hsieh, Superlattices and Microstructures, Vol. 4, No 4/5, pp. 603-608 (1988).
  6. "Strained Layer InGaAs-GaAs-AlGaAs Photopumped and Current Injection Lasers," R. M. Kolbas, N. G. Anderson, W. D. Laidig, Y. K. Sin, Y. C. Lo, K. Y. Hsieh and Y. J. Yang, IEEE J. Quantum Electronics, Vol. 24, pp. 1605-1613 (8 August 1988).
  7. "Carrier Recombination Dynamics in Thin InGaAs-GaAs Single Quantum Well Heterostructures", S. D. Benjamin, N. G. Anderson and R. M. Kolbas, Quantum Electronics and Laser Science Conference 1989 Technical Digest Series Vol. 12, pp. 84- 85 (1989).
  8. "InGaAs-GaAs-AlGaAs Strained-Layer Lasers with Heavy Silicon Doping," Y. K. Sin, K. Y. Hsieh, J. H. Lee, Y. Hwang and R. M. Kolbas, J. Appl. Physics 70, No. 2, pp. 568-573 (15 July 1991).


Thermal Stability and Intermixing of Quantum Wells
  1. "Transverse Junction Stripe Laser with a Lateral Heterobarrier by Diffusion Enhanced Alloy Disordering," Y. J. Yang, Y. C. Lo, G. S. Lee, K. Y. Hsieh and R. M. Kolbas, Appl. Phys. Lett. 49, pp. 835-837 (October 1986).
  2. "Transverse Junction Stripe Laser with a Lateral Heterobarrier by Diffusion-Enhanced Disordering," R. M. Kolbas, Y. J. Yang, Y. C. Lo, G. S. Lee, and K. Y. Hsieh, 44th Annual Device Research Conference, Burlington, VT., June 1986; Abstract published in IEEE Transactions on Electron Devices ED-33, No. 11, p. 1864 (Nov. 1987).
  3. "Ion Beam Mixing of GaAs/AlGaAs Superlattice and its Relation to Amorphization," P. Pronko, A. W. McCormick, D. B. Patrizio, A. K. Rai, R. M. Kolbas and B. S. Frank, Mat. Res. Soc. Symp. Vol. 147, pp. 297-302 (1989).
  4. "Enhanced/Suppressed Interdiffusion of AlGaAs-GaAs Interfaces by Controlling Gallium Vacancies," K. Y. Hsieh, Y. C. Lo, J. H. Lee and R. M. Kolbas, 1988 International Symposium on GaAs and Related Compounds, Sept. 12-14, 1988, Atlanta, GA, published in Institute of Physics Conference, Series No. 96, pp. 393-396, J. Revill, editor (London, 1988).
  5. "Enhanced/Suppressed Interdiffusion of InGaAs-GaAs-AlGaAs Strained Layers by Controlling Impurities and Gallium Vacancies," K. Y. Hsieh, Y. L. Hwang, J. H. Lee and R. M. Kolbas, 1989 Electronic Materials Conference, also in the Journal of Electronic Materials, Vol. 19, No. 12, pp. 1417-1423 (1990).
  6. "Enhanced/Suppressed Interdiffusion of Lattice Matched and Pseudomorphic III-V Heterostructures by Controlling Ga Vacancies," R. M. Kolbas, Y. L. Hwang, T. Zhang, M. Prairie, K. Y. Hsieh and U. K. Mishra, presented at the Workshop on Multiple Quantum Well Mixing, September 1990; Optical and Quantum Electronics 24, pp. S805-S812, (1991).
  7. "Dose Effects in Si FIB-Mixing of Short Period AlGaAs/GaAs Superlattices," A. J. Steckel, P. Chen, A. Choo, H. Jackson, J. T. Boyd, P. P. Pronko, A. Ezis and R. M. Kolbas, Materials Research Society, Fall Meeting Dec. 2-6, 1991, Boston, MA; "Advanced II-V Compound Semiconductor Growth, Processing and Devices," Editors S. J. Pearton, J. M. Zavada and D. K. Sadana, (Proceedings of Material Research Society, Pittsburgh, PA 1991).


Ultra-thin and Monolayer-thick Quantum Well Lasers
  1. "Stimulated Emission from Ultra-Thin (6.6Å) InAs/GaAs Quantum Well Heterostructures Grown by Atomic Layer Epitaxy," M. A. Tischler, N. G. Anderson, R. M. Kolbas and S. M. Bedair, Appl. Phys. Letters, 50, pp. 1266-1268 (4 May 1987).
  2. "Stimulated Emission from Monolayer Thick Quantum Well Heterostructures," J. H. Lee, K. Y. Hsieh and R. M. Kolbas, 1989 Device Research Conference, IEEE Transactions of Electron Devices 36, No. 11, p. 2613 (Nov. 1989).
  3. "Stimulated Emission from Monolayer - Thick AlxGa1-xAs-GaAs Single Quantum Well Heterostructures," J. H. Lee, K. Y. Hsieh, Y. L. Hwang and R. M. Kolbas, Appl. Phys. Lett. 56, No. 7, pp. 626-628 (12 Feb. 1990).
  4. "Photoluminescence and Stimulated Emission from Monolayer Thick Pseudomorphic InAs Single Quantum Well Heterostructures," J. H. Lee, K. Y. Hsieh and R. M. Kolbas, Phys. Rev. B. 41, pp. 7684-7684 (15 April 1990).
  5. "Stimulated Visible Light Emission from Ultra-Thin GaAs Single and Multiple Quantum Wells Sandwiched between Indirect-Gap Al0.49Ga0.51As Confining Layers," J. H. Lee, K. Y. Hsieh, Y. L. Hwang and R. M. Kolbas, Appl. Phys. Lett. 56, No. 20, pp. 1998-2000 (14 May 1990).
  6. "Monolayer Thick GaSbAs-GaAs Strained Layer Quantum Well Lasers," J. H. Lee, T. Zhang, and R. M. Kolbas, Conference on Laser and Electro-Optics 1991 Technical Digest Series, Vol. 10, pp. 334-335.
  7. "Vertical Cavity Surface Emitting Laser with a Submonolayer Thick InAs Active Layer," S. D. Benjamin, T. Zhang, Y. L. Hwang, M. S. Mytych and R. M. Kolbas, Appl. Phys. Lett. 60, No. 15, pp. 1800-1802 (13 April 1992).
  8. "Optical Absorption and Stimulated Emission from Ultrathin Single Quantum Wells," D. Zhang and R. M. Kolbas, Solid State Communications, Vol. 98, No. 7, pp. 645-649, 1996.


Wide Bandgap Semiconductors and Quantum Well Heterostructures
  1. 67. "Photoluminescence Characteristics of AlGaN-GaN-AlGaN Quantum Wells Grown by Low Pressure Metalorganic Chemical Vapor Deposition," M. A. Khan, R. A. Skogman, J. M. Van Hove, S. Krishnankutty and R. M. Kolbas, Appl. Phys. Lett. 56, No. 13, pp. 1257-1259 (26 March 1990).
  2. "Growth of High Optical and Electrical Quality GaN layers using Low-Pressure Metal Organic Chemical Vapor Deposition," M. Asif Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson, S. Krishnankutty and R. M. Kolbas, Appl. Phys. Lett. 58, No. 5, pp. 526-527 (4 Feb. 1991).
  3. "Photoluminescence Characterization of AlxGa1-xN Pseudomorphic Quantum Wells and Calculations of Strain Induced Bandgap Shifts," S. Krishnankutty, R. M. Kolbas, M. Asif Khan, J. N. Kuznia, J. M. Van Hove and D. T. Olson, presented at 1991 Electronics Materials Conference, U. of Colorado, Boulder; also Journal of Electronic Materials, Vol. 21, No. 6, pp. 609-612 (1992).
  4. "Optical Characterization of AlGaN-GaN-AlGaN Quantum Wells," S. Krishnankutty, R. M. Kolbas, M. A. Khan, J. N. Kuznia, J. M. Van Hove and D. T. Olson, Journal of Electronic Materials, Vol. 21, No. 4, pp. 437-440 (1992).
  5. "Optoelectronic Properties of GaN, AlGaN, and AlGaN-GaN Quantum Well Heterostructures," R. M. Kolbas and S. Krishnankutty, LEOS 1993 Summer Topical Meeting Digest on Visible Semiconductor Lasers, July 21-22, 1993, Santa Barbara, CA (IEEE Catalog Number 93TH0549-6, Library of Congress Number 93-77778).
  6. "Investigation of In-situ Doping Effect on GaN Epitaxial Growth in a Mass Production Scale Multi-Wafer-Rotating-Disc Reactor," C. Yuan, T. Salagaj, A. Gurary, A. G. Thompson, C. S. Chern, W. Kroll, R. A. Stall, C.-Y. Hwang, M. Schurman, Y. Li, W. E. Mayo, Y. Yu, S. Krishnankutty, I. K. Shmagin, R. M. Kolbas and S. J. Pearton, J. Vac. Science Tech. B, Vol. 13, p. 2075, Sept./Oct. 1995.
  7. "P-Type GaN Epitaxial Growth on c-Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD Reactor," C. Yuan, T. Salagaj, A. Gurary, P. Zawadzki, C. S. Chern, W. Kroll, R. A. Stall, C.-Y. Hwang, Y. Li, M. Schurman, W. E. Mayo, Y. Yu, S. J. Pearton, S. Krishnankutty, and R. M. Kolbas, presented at the 1995 Electronic Materials Conference, Charlottesville, VA 1995, and published in J. Electrochem. Soc. Vol. 142, p. L163, Sept. 1995.
  8. "Effect of Shroud Flow on High Quality InxGa1-xN/GaN Double Heterojunction deposition in a Production Scale Multi-Wafer-Rotating-Disc MOCVD Reactor," C. Yuan, T. Salagaj, R. A. Stall, M. Schurman, C. Y. Hwang, Y. Li, W. E. Mayo, Y. Lu, S. Krishnankutty and R. M. Kolbas, submitted to J. Electronic Materials.
  9. "Growth and Fabrication of GaN-InGaN Microdisk Laser Structures," C. R. Abernathy, S. J. Pearton, J. D. MacKenzie, J. R. Mileham, S. R. Bharatan, V. Krishnamoorthy, K. S. Jones, M. Hagerott-Crawford, R. J. Shul, S. P. Kilcoyne, J. M. Zavada, D. Zhang and R. M. Kolbas, Solid State Electronics Vol. 39, No. 2, pp. 311-313 (February 1996).
  10. "The Growth of p-type epitaxial GaN films on Sapphire Substrates in a Production Scale Multi-wafer Rotating Disc MOCVD Reactor," C. Yuan, T. Salagaj, A. Gurary, W. Kroll, R. A. Stall, C. Y. Hwang, M. Schurman, Y. Li, W. E. Mayo, Y. Lu, S. Krishnankutty, R. M. Kolbas and S. J. Pearton, Silicon Carbide and Related Materials 1995, Vol. 142, pp. 855-858 (1996).
  11. "Production of p-type GaN in a multi-wafer-rotating-disc Reactor," C. Yuan, R. Walker, T. Salagaj, A. Gurary, W. Kroll, R. A. Stall, M. Schurman, C. Y. Hwang, Y. Li, Y. Lu, W. E. Mayo, Y. Lu, S. Krishnankutty, R. M. Kolbas and S. J. Pearton, Compound Semiconductors 1995 Vol. 145, pp. 133-136 (1996).
  12. "Photoluminescence Characteristics of GaN/InGaN/GaN Quantum Wells," I. K. Shmagin, J. F. Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, A. C. Abare, L. A. Coldren, U. K. Mishra and S. P. DenBaars, J. Electronic Materials, Vol. 26, No. 3, pp. 325-329, (March 15, 1997).
  13. "Observation of Lasing from Photopumped InGaN/GaN Heterostructures in an Edge Emitting Configuration," I. K. Shmagin, J F. Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, U. K. Mishra, and S. P. DenBaars, J. Applied Phys. Vol. 81, No. 4, pp. 2021-2023, (15 February 1997).
  14. "Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures", I. K. Shmagin, J. F. Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, U. K. Mishra, and S. P. DenBaars, Materials Research Society Meeting, Boston, MA, Dec. 2-7, 1996; Materials Research Society Symp. Proc. Vol. 499, III-V Nitrides, F. A. Ponce, T. D. Moustakas, I. Akasaki, B. A. Monemar, Editors, pp. 1209-1214 (Proceedings of Material Research Society, Pittsburgh, PA 1997).
  15. "Growth of Bulk AlN and GaN Single Crystals by Sublimation", C. M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, I. K. Shmagin, J. F. Muth, R. M. Kolbas, R. Nemanich, and R. F. Davis, Materials Research Society Meeting, Boston, MA, Dec. 2-7, 1996; Materials Research Society Symp. Proc. Vol. 499, III-V Nitrides, F. A. Ponce, T. D. Moustakas, I. Akasaki, B. A. Monemar, Editors, pp. 41-46 (Proceedings of Material Research Society, Pittsburgh, PA 1997).
  16. "Growth of Bulk InGaN films and Quantum Wells by Atmospheric Pressure Metalorganic Chemical Vapour Deposition," S. Keller, B. P. Keller, D. Kapolnek, U. K. Mishra, S. P. DenBaars, I. K. Shmagin, R. M. Kolbas and S. Krishnankutty, J. Crystal Growth Vol. 170, pp. 349-352 (1997).
  17. "Optical Metastability in Bulk GaN Single Crystals", I. K. Shmagin, J. F. Muth, J. H. Lee, R. M. Kolbas, C. M. Balkas, Z. Sitar and R. F. Davis, Applied Physics Letters Vol. 71, No. 4, pp. 455-457 (28 July 1997).
  18. "Absorption Coefficient, Energy Gap, Exciton Binding Energy and Recombination Lifetime of GaN Obtained from Transition Measurements," J, F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B. P. Keller, U. K. Mishra and S. P. DenBaars, Applied Physics Letters Vol. 71, No. 18, pp. 2572-2574 (3 November 1997).
  19. "Optical Data Storage in InGaN/GaN Heterostructures," I. K. Shmagin, J. F. Muth, R. M. Kolbas, R. D. Dupuis, P. A. Grudowski, C. J. Eiting, J. Park, B. S. Shelton and D. J. H. Lambert, Applied Physics Letters Vol. 71, No. 18, pp. 2572-2574 (3 November 1997).
  20. "Optical Metastability in InGaN/GaN Heterostructures," I. K. Shmagin, J. F. Muth, R. M. Kolbas, R. D. Dupuis, P. A. Grudowski, C. J. Eiting, J. Park, B. S. Shelton, and D. J. H. Lambert, Compound Semiconductors 1997, Vol. 156, pp. 375-378 (1998).
  21. "Reconfigurable Optical Properties in InGaN/GaN Quantum Wells," I. K. Shmagin, J. F. Muth, R. M. Kolbas, M. P. Mack, A. C. Abare, S. Keller, L. A. Coldren, U. K. Mishra and S. P. DenBaars, Applied Physics Letters Vol. 71, No. 11, pp. 1455-1457 (15 September 1997).
  22. "Microdisk Laser Structures formed in III-V Nitride Epilayers," J. M. Zavada, C. R. Abernathy, S. J. Pearton, J. D. Mackenzie, J. R. Mileham, R. G. Wilson, R. N. Schwartz, M. Haggerott-Crawford, R. J. Shul, S. P. Kilcoyne, D. Zhang and R. M. Kolbas, Solid State Electronics, Vol. 41, No. 2, pp. 353-357 (1997).
  23. "Optical and Structural Characterization of InGaN Quantum-Well Heterostructures Grown by Metalorganic Chemical Vapor Deposition," R. D. Dupuis, P. A. Grudowski, C. J. Eiting, I. K. Shmagin, R. M. Kolbas and S. J. Rosner, Institute of Physics Conference Series Compound Semiconductors 1997, Vol. 156, pp. 231-234 (1998).
  24. "Visible-blind GaN Schottky barrier detectors grown on Si (111)," A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth and R. M. Kolbas, Applied Physics Letters Vol. 72, No. 5, pp. 551-553 (2 Feb. 1998).
  25. "Growth of High Quality Single Crystal ZnO Films on Sapphire by Pulsed Laser Ablation," A. K. Sharma, K. Dovidenko, S. Oktyabrsky, D. E. Moxey, J. F. Muth, R. M. Kolbas, and J. Narayan, Materials Research Society Meeting, Spring 1998; Materials Research Society Symp. Proc. Vol. , title, Editors, pp. (Proceedings of Material Research Society, Pittsburgh, PA 1998).
  26. "Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition," J. F. Muth, R. M. Kolbas, A. K. Sharma, S. Oktyabrsky and J. Narayan, submitted to Applied Physics Letters.
  27. "Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys," J. F. Muth, J. D. Brown, M. A. L. Johnson, Zhonghai Yu, R. M. Kolbas, J. W. Cook, Jr. and J. F. Schetzina, Material Research Society Fall Meeting 1998 (Paper G5.2). Published in MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, pp. U510-U515, (Suppl. 1, 1999)
  28. "Optical Properties of Wide Bandgap III-V Nitride Semiconductors," R. M. Kolbas, I. K. Shmagin and J. F. Muth, 1998 5th International Conference on Solid State and Integrated Circuit Technology, Editors: Min Zhang and King Ning Tu, IEEE Press ISBN 0-7803-4306-9, pp. 609-612.
  29. "Linear Optical Properties of a Heavily Mg-doped Al0.09Ga0.91N Epitaxial Layer," M. J. Bergmann, U. Ozgur, H. C. Casey, J. F. Muth, Y. C. Chang, R. M. Kolbas, R. A. Rao, C. B. Eom, and M. Schurman, Applied Physics Letters, Vol. 74, No. 21, pp. 3188-3190 (24 May 1999).
  30. "Effect of Growth Temperature on Point Defect Density of Unintentionally Doped GaN Grown by MOCVD and HVPE," V. A. Joshkin, C. A. Parker, S. M. Bedair, J. F. Muth, I. K. Shmagin, R. M. Kolbas, E. L. Piner, R. J. Molnar, J. Applied Physics Vol. 86, No. 1, pp. 281-288 (1 July 1999).
  31. "Optical and Structural Properties of Epitaxial MgxZn1-xO Alloys," A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas and O.W. Holland, Applied Physics Letters, Vol. 75, No. 21, pp. 3327-3329 (22 Nov. 1999).
  32. "Growth and Characterization of GaN Single Crystals," C. M. Balkus, Z. Sitar, L. Bergman, I. K. Shmagin, J. F. Muth, R. J. Nemanich and R. F. Davis, J. Crystal Growth, Vol. 208, pp. 100-106, (Jan. 2000).
  33. "Structural and Optical Property Investigations on Mg-Alloying in Epitaxial Zinc Oxide Films on Sapphire," A. K. Sharma, C. Jin, J. Narayan, C. W. Teng, J. F. Muth, R. M. Kolbas and O W. Holland, GaN and Related Alloys, edited by H. Amano, R. M. Feenstra, T. H. Myers and M. S. Shur, MRS Internet Journal of Nitride Semiconductor Research, Vol. 595 (2000).
  34. "Photoluminescence and Electrical Characterization of the Two-Dimensional Electron Gas in a Si Delta-Doped GaN layer," C. W. Teng, M. O. Aboelfotoh, J. F. Muth, R. M. Kolbas and R. F. Davis, Applied Physics Letters, Vol. 78, No. 12, pp. 1688-1690 (19 Mar. 2001).
  35. "Optical Characterization of Wide Band Gap Amorphous Semiconductors (a-Si:C:H): Effect of Hydrogen Dilution," Park, M.; Teng, C. W.; Sakhrani, V.; Mclaurin, M. B.; Kolbas, R. M.; Sanwald, R. C.; Nemanich, R. J.; Hren, J. J.; Cuomo, J. J., Journal of Applied Physics, Vol. 89, No. 2, pp. 1130-1137 (15 Jan. 2001).
  36. "Optical Metastability of Sub-Bandgap (2.2eV) Yellow Luminescence in GaN," Y. C. Chang, A. E. Oberhofer, J. F. Muth, R. M. Kolbas and R. F. Davis Applied Physics Letters Vol. 79, No. 3, pp. 281-283 (16 July 2001).
  37. "Electron-beam-induced optical memory effects in GaN," Y. C. Chang, A. L. Cai, M. A. L. Johnson, J. F. Muth, R. M. Kolbas, Z. J. Reitmeier, S. Einfeldt, and R. F. Davis, Applied Physics Letters 80, No. 15, pp. 2675-2677 (15 April 2002).
  38. "X-ray and Raman Analysis of GaN Produced by Ultrahigh-rate Magnetron Sputter Epitaxy," Minseo Park, J.-P. Maria, J. J. Cuomo, Y. C. Chang, J. F. Muth, R. M. Kolbas and R. J. Nemanich, Applied Physics Letters 81, No. 10, pp. 1797-1799 (2 September 2002).
  39. "Optical and structural studies of hydride vapor phase epitaxy grown GaN," Y. C. Chang, A. L. Cai, J. F. Muth, R. M. Kolbas, M. Park, J. J. Cuomo, A. Hanser, and J. Bumgarner, J. Vac. Sci. Technol. A 21, No. 3, pp. 701-705 (May-June 2003).
  40. "Effects of thermal annealing on the metastable optical properties of GaN thin films," Y.C. Chang, R. M. Kolbas, Z. J. Reitmeier, and R. F. Davis, J. Vac. Sci. Technol. A Vol. 24, No. 4, pp.1051-1054 July/Aug 2006.
  41. "Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate," F. S. Al-Ajmi, R. M. Kolbas, J. C. Roberts, P. Rajagopal, J. W. Cook Jr., E. L. Piner, and K. J. Linthicum accepted for publication in Applied Physics Letters.

Nanoparticles and Rare Earth Doped Semiconductors


Erbium Doped semiconductors
  1. "Origin of Photoluminescence from Er3+ Centers in GaAs and Al0.4Ga0.6As Grown by Molecular Beam Epitaxy," T. Zhang, Y. Hwang, J. Sun, N. V. Edwards, P. J. Caldwell and R. M. Kolbas, 1992 Electronic Materials Conference, Massachusetts Institute of Technology, Cambridge, MA, June 24-26, 1992. Also, published in the Journal of Electronic Materials, Vol. 22, No. 9, pp. 1137-1140 (1993).
  2. "Molecular Beam Epitaxial Growth and Optical Characterization of Erbium Doped GaAs/AlGaAs Heterostructures," T. Zhang, D. Zhang, F. E. Reed, N. V. Edwards, D. E. Moxey, R. M. Kolbas, and P. J. Caldwell, Presented at the 1993 Electronic Materials Conference, Santa Barbara, CA. Also, to be submitted to the J. Electronic Materials.
  3. "Photoluminescence Study of Energy Transfer Processes in Erbium Doped AlxGa1-xAs Grown by MBE," T. Zhang, J. Sun, N. V. Edwards, D. E. Moxey, R. M. Kolbas and P. J. Caldwell, Materials Research Society Meeting, San Francisco, Spring 1993; Also, Materials Research Society Symp. Proc. Vol. 301, "Rare Earth Doped Semiconductors," G. S. Pomrenke, P. B. Klein, D. W. Langer, Editors, pp. 257-262 (Proceedings of Material Research Society, Pittsburgh, PA 1993).
  4. "Optical Characteristics of Erbium Doped AlGaAs-GaAs Heterostructures," D. Zhang, T. Zhang, R. M. Kolbas, and J. M. Zavada, Presented at the ICSICT '95 International Conference on Solid State and Integrated Circuit Technology, Oct. 24-28, 1995. Paper published in Proceedings of the Fourth International Conference on Solid-State and Integrated-Circuit Technology (Beijing, China), G. L. Baldwin, Z. Li, C. C. Tsai and J. Zhang, Eds., pp. 506-508, 1995.
  5. "Er-doped AlGaAs native oxides: photoluminescence characterization and process optimization," Kou Leigang, D. C. Hall, C. Strohhofer, A. Polman, Tong Zhang, R. M. Kolbas, R. D. Heller, Jr., R. D. Dupuis, IEEE Journal of Selected Topics in Quantum Electronics Vol. 8, No. 4, pp. 880-890, (July-August 2002).


Light Emission from Nanoparticles
  1. "Visible Light Emission from Silicon Nanoparticles," D. Zhang, R. M. Kolbas, P. Mehta, A. K. Singh, D. J. Lichtenwalner, K. Y. Hsieh and A. I. Kingon, Materials Research Society, Fall Meeting, Dec. 2-6, 1991, Boston MA; "Light Emission from Silicon," Editors, S. S. Iyer, L. T. Canham and R. T. Collins (Proceedings of Materials Research Society, Pittsburgh, PA, 1991).
  2. "Light Emission from Crystalline Silicon and Amorphous Silicon Oxide (SiOx) Nanoparticles," D. Zhang, R. M. Kolbas, P. D. Milewski, D. J. Lichtenwalner, P. Mehta and A. I. Kingon, IEEE Journal of Electronic Materials, Vol. 23, No. 1, pp. 57-62, 1994. Also, presented as "Visible Light Emission from Silicon and Oxygen-Doped Silicon Nanoparticles," D. Zhang, R. M. Kolbas, P. D. Milewski, P. Mehta, D. J. Lichtenwalner and A. I. Kingon, 1993 Electronic Materials Conference.
  3. "Light Emission from Thermally Oxidized Silicon Nanoparticles," D. Zhang, P. D. Milewski, D. J. Lichtenwalner, R. M. Kolbas, A. I. Kingon and J. M. Zavada, Appl. Phys. Lett. 65, No. 21, pp. 2684-2686, (21 Nov. 1994).
  4. "Light Emission from Silicon Nanoparticles: Mechanisms and Applications", D. Zhang and R. M. Kolbas, Presented at the ICSICT '95 International Conference on Solid State and Integrated Circuit Technology, Oct. 24-28, 1995, Beijing, China. Paper published in Proceedings of the Fourth International Conference on Solid-State and Integrated-Circuit Technology (Beijing, China), G. L. Baldwin, Z. Li, C. C. Tsai and J. Zhang, Eds., pp. 54-56, 1995.
  5. "Photoluminescence from Mechanically Milled Si and SiO2 Powders", T. D. Shen, I. K. Shmagin, C. C. Koch, R. M. Kolbas, Y. Fahmy, L. Bergman, R. J. Nemanich, M. T. McClure, Z. Sitar, and M. X. Quan, Phys. Rev. B Vol. 55, No. 12, pp. 7615-7623 (15 March 1997).
  6. "Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition," Q. Wei, A. K. Sharma, R. J. Naratan, N. M. Ravindra, S. Oktyabrsky, J. Sankar, J. F. Muth, R. M. Kolbas, and J. Narayan, in "Advances in Laser Deposition of Materials", edited by R. Singh, D. Lowndes, D. Chrisey, E. Fogarassy, and J. Narayan, Proceedings of the Materials Research Society Vol. 526, pp. 331-?? (1998).
  7. "Germanium Nanostructures Fabricated by Pulsed Laser Deposition," K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, and R. M. Kolbas, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Canham, M. Sailor, K. Tanaka, and C. C. Tsai, Proceedings of the Materials Research Society Vol. 536, Boston, MA, 1998.
  8. "Optical and Structural Studies of Ge Nanocrystals Embedded in an AlN Matrix by Pulsed Laser Deposition," K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng and R. M. Kolbas, Applied Physics Letters, Vol. 75, No. 9, pp. 1222-1224 (30 Aug. 1999).
  9. "Quantum Confinement of the E1 and E2 Transitions in Ge Quantum Dots Embedded in an Al2O3 or AlN Matrix," C. W. Teng, J. F. Muth, R. M. Kolbas, K. M. Hassan, A. K. Sharma, A. Kvit and J. Narayan, Applied Physics Letters, Vol. 76, No. 1, pp. 43-45 (3 Jan. 2000).
  10. "Size Effect in Germanium Nanostructures Fabricated by Pulsed Laser Deposition," K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng and R. M. Kolbas, in Nanophase and Nanocomposite Materials III, edited by H. Hahn, S. Komarneni and J. C. Parker, Materials Research Society Proceedings, Vol. 581 (2000).
  11. "Quantum Confinement of E1 and E2 transitions in Ge Quantum Dots Embedded in Al2O3 or an AlN Matrix," C. W. Teng, J. F. Muth, R. M. Kolbas, K. M. Hassan, A. K. Sharma and J. Narayan, in Optical Microstructural Characterization of Semiconductors, edited by N. M. Kalkhoran, J. Piqueras, T. Sekiguchi and M. Selim Unlu, Materials Research Society Proceedings, Vol. 588 (2000).

Integrated Optoelectronic Circuits


Monolithic Receivers
  1. "Planar Optical Sources and Detectors for Monolithic Integration with GaAs MESFET Electronics," R. Kolbas, J. Carney, J. Abrokwah, E. Kalweit, M. Hitchell, Integrated Optics II, edited by D. G. Hall, Proc. SPIE 321, pp. 94-102 (1982). Integrated Optics III, L. Hutcheson (editor), Proc. SPIE 408, pp. 121-128 (1983).
  2. "Planar Monolithic Integration of a Photodiode and a GaAs Preamplifier," R. M. Kolbas, J. Abrokwah, J. K. Carney, D. H. Bradshaw, B. R. Elmer, J. R. Biard, Applied Physics Letters 43, pp. 821-823 (November 1983).
  3. "Planar Monolithic Integration of a Photodiode and a GaAs MESFET Preamplifier," R. M. Kolbas, J. Abrokwah, J. K. Carney, D. H. Bradshaw, B. R. Elmer, J. R. Biard, 41st Annual Device Research Conference, June 20-23, 1983, University of Vermont, Burlington, Vermont. IEEE Transactions Electron Devices 30, p. 1611 (November 1983).
  4. "Planar Monolithic Fiber Optic Receiver Chip on a GaAs Semi-Insulating Substrate," R. M. Kolbas, J. K. Carney, M. D. Longerbone, E. L. Kalweit, S. T. Reimer, Optical Interfaces for Digital Circuits and Systems, R. A. Milano (ed.), SPIE 466, pp. 52-58 (1984).

Monolithic Transmitters
  1. "Gigabit Optoelectronic Transmitter," J. K. Carney, M. J. Helix, R. M. Kolbas, published in the record of the GaAs IC Symposium, Phoenix (October 1983).
  2. "Integrated Optoelectronic Transmitter," J. Carney, M. Helix, R. Kolbas, S. Jamison, and S. Ray, Integrated Optics III, L. Hutcheson (editor), Proc. SPIE 408, pp. 121-128 (1983).
  3. "Monolithic Optoelectronic/Electronic Circuits," J. K. Carney, M. J. Helix, R. M. Kolbas, S. A. Jamison, S. Ray, published in the record of the GaAs IC Symposium, pp. 38-41, New Orleans (October 1982).
  4. "Operation of Monolithic Laser/Multiplexer Optoelectronic IC," J. K. Carney, M. Helix, R. M. Kolbas, Optical Interfaces for Digital Circuits and Systems, R. A. Milano (ed.), SPIE 466, pp. 59-64 (1984).
  5. "Monolithically Integrated SQW Laser and HBT Laser Driver Via Selective OMVPE Regrowth," D. B. Slater, Jr., P. M. Enquist, J. A. Hutchby, F. E. Reed, A. S. Morris, R. M. Kolbas, R. J. Trew, A. S. Lujan and J. W. Swart, Photonics Technology Letters 5, No. 7, pp. 791-794 (7 July 1993).

Conventional Optoelectronic Devices


Light Emitters
  1. "Monolithic Matrix Addressable AlGaAs/GaAs Visible LED Array," S. Ray, R. M. Kolbas, M. J. Hafich and B. E. Dies, IEEE Transactions on Electron Devices, Vol. ED-33, pp. 845-849 (June 1986).
  2. "Surface and Bulk Leakage Currents in Transverse Junction Stripe Lasers," Y. K. Sin, K. Y. Hsieh, J. H. Lee and R. M. Kolbas, J. Appl. Physics 69, pp. 1081-1090 (Jan. 1991).
  3. "Modeling, Analysis and Simulation of an Optical Time Division Multiple-Access Network Architecture," M. Devetsikiotis, Q. G. Zhou, G. R. Cato, J. K. Townsend and R. M. Kolbas, Proceedings of SPIE International Symposium OE/Fibers '92, Boston, September 1992. SPIE Volume pp. , 1992.


Detectors
  1. "Electrical Properties of CdTe Metal-Semiconductor Field Effect Transistors," D. L. Dreifus, R. M. Kolbas, J. R. Tassitino, R. L. Harper, R. N. Bicknell and J. F. Schetzina, Proc. of 1987 U.S. Workshop on Mercury Cadmium Telluride, New Orleans, LA (6-8 Oct. 1987); J. Vac. Sci. Technology. A6, pp. 2722-2724 (July/Aug. 1988).
  2. "Photocurrent Enhancement in a GaAs Metal-Semiconductor-Metal Photodetector Due to Ultra Small Islands," W. C. Koscielniak, R. M. Kolbas, M. A. Littlejohn and B. W. Licznerski, Appl. Phys. Lett., 52, pp. 987-989 (21 March 1988).
  3. "Performance of a Near-Infrared GaAs Metal-Semiconductor-Metal (MSM) Photodetector with Islands," W. C. Koscielniak, R. M. Kolbas and M. A. Littlejohn, IEEE Electron Device Lett., vol. 9, pp. 485-487 (Sept. 1988).
  4. "Dark Current Characteristics of GaAs Metal-Semiconductor-Metal (MSM) Photodetectors," W. C. Koscielniak, J. L. Pelouard, R. M. Kolbas and M. A. Littlejohn, IEEE Trans. Electron Devices ED-37, No. 7 pp. 1623-1629 (July 1990).
  5. "Visible-blind GaN Schottky barrier detectors grown on Si (111)," A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth and R. M. Kolbas, Applied Physics Letters Vol. 72, No. 5, pp. 551-553 (2 Feb. 1998).

Electronic Devices


Resonant Tunneling
  1. "Resonant Tunneling Transport at 300K in GaAs-AlGaAs Quantum Well Grown by Metalorganic Chemical Vapor Deposition," S. Ray, P. Ruden, V. Sokolov, R. Kolbas, T. Boonstra and J. Williams, Appl. Phys. Lett., 48, pp. 1666-1668 (16 June 1986).
  2. "Room Temperature Negative Differential Resistance in Strained Layer GaAs-AlGaAs-InGaAs Quantum Well Heterostructures," G. S. Lee, K. Y. Hsieh and R. M. Kolbas, Appl. Phys. Lett. 49, pp. 1528-1530 (December 1986).
  3. "Negative Differential Resistance in a Strained Quantum Well Structure with a Bound State," G. S. Lee, K. Y. Hsieh and R. M. Kolbas, in J. Appl. Phys. 62, pp. 3453-3456 (15 Oct. 1987).
  4. "Negative Differential Resistance in InGaAs Strained Layer Heterostructures," G. S. Lee, K. Y. Hsieh and R. M. Kolbas, Superlattices and Microstructures, Vol. 4, No. 4/5, pp. 537-540 (1988).


II-VI Semiconductor Devices
  1. "CdTe Metal Semiconductor Field Effect Transistors," D. L. Dreifus, R. M. Kolbas, K. A. Harris, R. N. Bicknell, R. L. Harper and J. F. Schetzina, Appl. Phys. Lett. 51, pp. 931-933 (21 Sept. 1987).
  2. "Growth and Properties of Doped CdTe Films Grown by Photoassisted Molecular Beam Epitaxy," S. Hwang, R. L. Harper, K. A. Harris, N. C. Giles, R. N. Bicknell, J. F. Schetzina, D. L. Dreifus, R. M. Kolbas and M. Chu, J. Vac. Sci. Technology., B6, pp. 777-778, (Mar./Apr. 1988).
  3. "Diluted Magnetic Semiconductor Cd1-xMnxTe Schottky Diodes and Field Effect Transistors," D. L. Dreifus, R. M. Kolbas, R. L. Harper, J. R. Tassitino, S. Hwang and J. F. Schetzina, Appl. Phys. Lett. 53, pp. 1279-1281 (3 Oct. 1988).
  4. "Low-Temperature Processing Technology for II-VI Semiconductors," D. L. Dreifus, R. M. Kolbas, B. P. Sneed and J. F. Schetzina, Fall 1989 Proceedings of the Materials Research Society, Proc. 161, pp. 323- (1990).
  5. "Field-Effect Transistors in Hg1-xCdxTe Grown by Photoassisted Molecular Beam Epitaxy," D. L. Dreifus, R. M. Kolbas, J. W. Han, J. W. Cook, Jr. and J. F. Schetzina, J. of Vac. Sci. Tech. A8, pp. 1221- (1990).
  6. "ZnSe Field Effect Transistors," D. L. Dreifus, B. P. Sneed, J. Ren, J. W. Cook, Jr., J. F. Schetzina and R. M. Kolbas, Appl. Phys. Lett. 57, No. 16, pp. 1663-1665 (15 Oct. 1990).
  7. "Field Effect Transistors in Hg1-xCdxTe Grown by Photoassisted Molecular Beam Epitaxy," D. L. Dreifus, R. M. Kolbas, J. W. Han, J. W. Cook, Jr., and J. F. Schetzina, J. Vac. Sci. Tech. A8, pp. 1221 (1990).
  8. "ZnSe Light Emitting Diodes," J. Ren, K. A. Powers, B. Sneed, D. L. Dreifus, J. W. Cook, Jr., J. F. Schetzina, and R. M. Kolbas, Appl. Phys. Lett. 57, No. 18, pp. 1901-1903 (29 Oct. 1990).


Low Temperature GaAs
  1. "Effects of a Low Temperature GaAs Buffer Layer on the Interdiffusion of GaAs/AlGaAs Heterostructures During Thermal Annealing," presented at the 6th Conference on Semi-insulating III-V Materials, Toronto, May 13-16, 1990; also published in the proceedings of the 6th Conference on Semi-insulating III-V Materials.
  2. "The Elimination of Carrier Compensation Caused by a Low Temperature MBE Grown GaAs Surface Layer in a GaAs MESFET Structure," W. L. Yin, J. H. Lee, T. Zhang, R. M.. Kolbas and U. K. Mishra, presented at the 1990 Electronic Materials Conference; also, paper submitted to the Journal of Electronic Materials.
  3. "Improved Breakdown Voltage in GaAs MESFET's Utilizing Surface Layers of GaAs Grown at a Low Temperature by MBE," W. L. Yin, Y. Hwang, J. H. Lee, R. M. Kolbas, R. J. Trew, and U. K. Mishra, Electron Device Letters 11, No. 12, pp. 561-563 (Dec. 1990).
  4. "Diffusion of Zinc into GaAs Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperatures," Y. K. Sin, Y. Hwang, T. Zhang and R. M. Kolbas, Journal of Electronic Materials, Vol. 20, No. 6, pp. 465-469 (1991).
  5. "Evaluation of LT GaAs for High Speed Electronic and Analog Optoelectronic Applications," U. K. Mishra and R. M. Kolbas, Materials Research Society, Fall Meeting Dec. 2-6, 1991, Boston MA; "Low Temperature (LT) GaAs and Related Materials", Editors G. L. Witt, R. Calawa, U. Mishra and E. Weber (Proceedings of Materials Research Society, Pittsburgh, PA, 1991).
  6. "Investigation of the Electronic Properties of In-Situ Annealed Low-Temperature GaAs Grown by Molecular Beam Epitaxy," L. W. Yin, Y. Hwang, J. P. Ibbetson, M. M. Hashemi, T. Zhang, R. M. Kolbas and U. K. Mishra, submitted to J. Electron Devices.
  7. "Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs," Y. Hwang, D. Zhang, T. Zhang, M. Mytych and R. M. Kolbas, Materials Research Society, Fall Meeting Dec. 2-6, 1991, Boston MA; "Low Temperature (LT) GaAs and Related Materials" Editors G. L. Witt, R. Calawa, U. Mishra and E. Weber (Proceedings of Material Research Society, Pittsburgh, PA, 1991).
  8. "Temperature Investigation of the Gate-Drain Diode power GaAs-MESFET with Low-Temperature-grown (Al)GaAs Passivation," L. W. yin, N. X. Nguyen, Y. Hwang, J. P. Ibbetson, R. M. Kolbas, A. C. Gossard and U. K. Mishra, Journal of Electronic Materials Vol. 22, No. 12, pp. 1503-1505 (Dec 1993).
  9. "Strained-Induced Phase Separation in Annealed Low-Temperature Grown Al0.3Ga0.7As," K. C. Hsieh, K. Y. Hsieh, Y. L. Hwang, T. Zhang and R. M. Kolbas, Appl. Phys. Lett. Vol. 68 (13), pp. 1790-1792 (25 March 1996).

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